Advanced Research Center for Nanolithography (Netherlands)
companyAmsterdam, North Holland, The Netherlands
Research output, citation impact, and the most-cited recent papers from Advanced Research Center for Nanolithography (Netherlands) (Netherlands). Aggregated across the NobleBlocks index of 300M+ scholarly works.
Top-cited papers from Advanced Research Center for Nanolithography (Netherlands)
Several application fields can benefit from solar-hydrogen technologies <italic>via</italic> specific short-term and long-term pathways.
and are identified as (surface) oxides. A large body of evidence supports the conjecture that these oxides are more reactive than the corresponding O-covered metallic surfaces under similar conditions, although still debated in the literature. An outlook on this developing field, including directions that move away from CO oxidation towards more complex chemistry, concludes this review.
Traditional imaging systems exhibit a well-known trade-off between the resolution and the field of view of their captured images. Typical cameras and microscopes can either "zoom in" and image at high-resolution, or they can "zoom out" to see a larger area at lower resolution, but can rarely achieve both effects simultaneously. In this review, we present details about a relatively new procedure termed Fourier ptychography (FP), which addresses the above trade-off to produce gigapixel-scale images without requiring any moving parts. To accomplish this, FP captures multiple low-resolution, large field-of-view images and computationally combines them in the Fourier domain into a high-resolution, large field-of-view result. Here, we present details about the various implementations of FP and highlight its demonstrated advantages to date, such as aberration recovery, phase imaging, and 3D tomographic reconstruction, to name a few. After providing some basics about FP, we list important details for successful experimental implementation, discuss its relationship with other computational imaging techniques, and point to the latest advances in the field while highlighting persisting challenges.
Abstract Laser-produced transient tin plasmas are the sources of extreme ultraviolet (EUV) light at 13.5 nm wavelength for next-generation nanolithography, enabling the continued miniaturization of the features on chips. Generating the required EUV light at sufficient power, reliability, and stability presents a formidable multi-faceted task, combining industrial innovations with attractive scientific questions. This topical review presents a contemporary overview of the status of the field, discussing the key processes that govern the dynamics in each step in the process of generating EUV light. Relevant physical processes span over a challenging six orders of magnitude in time scale, ranging from the (sub-)ps and ns time scales of laser-driven atomic plasma processes to the several μ s required for the fluid dynamic tin target deformation that is set in motion by them.
Abstract Despite its importance in oxidation catalysis, the active phase of Pt remains uncertain, even for the Pt(111) single-crystal surface. Here, using a ReactorSTM, the catalytically relevant structures are identified as two surface oxides, different from bulk α-PtO 2 , previously observed. They are constructed from expanded oxide rows with a lattice constant close to that of α-PtO 2 , either assembling into spoked wheels, 1–5 bar O 2 , or closely packed in parallel lines, above 2.2 bar. Both are only ordered at elevated temperatures (400–500 K). The triangular oxide can also form on the square lattice of Pt(100). Under NO and CO oxidation conditions, similar features are observed. Furthermore, both oxides are unstable outside the O 2 atmosphere, indicating the presence of active O atoms, crucial for oxidation catalysts.
Abstract Single‐atom catalysts (SACs) bridge homo‐ and heterogeneous catalysis because the active site is a metal atom coordinated to surface ligands. The local binding environment of the atom should thus strongly influence how reactants adsorb. Now, atomically resolved scanning‐probe microscopy, X‐ray photoelectron spectroscopy, temperature‐programmed desorption, and DFT are used to study how CO binds at different Ir 1 sites on a precisely defined Fe 3 O 4 (001) support. The two‐ and five‐fold‐coordinated Ir adatoms bind CO more strongly than metallic Ir, and adopt structures consistent with square‐planar Ir I and octahedral Ir III complexes, respectively. Ir incorporates into the subsurface already at 450 K, becoming inactive for adsorption. Above 900 K, the Ir adatoms agglomerate to form nanoparticles encapsulated by iron oxide. These results demonstrate the link between SAC systems and coordination complexes, and that incorporation into the support is an important deactivation mechanism.
A very precise ratio The value of the ratio of the masses of the proton and the electron has a bearing on the values of other physical constants. This ratio is known to a very high precision. Patra et al. improved this precision even further by measuring particular frequencies in the rovibrational spectrum of the hydrogen deuteride molecular ion (HD + ) (see the Perspective by Hori). To reach this high precision, the researchers placed the HD + molecules in an ion trap and surrounded them by beryllium ions. The cold beryllium ions then helped cool the HD + molecules, making the HD + spectral lines narrow enough that the proton-electron mass ratio could be extracted by comparison with theoretical predictions. Science , this issue p. 1238 ; see also p. 1160
Abstract This report presents the conceptual design of a new European research infrastructure EuPRAXIA. The concept has been established over the last four years in a unique collaboration of 41 laboratories within a Horizon 2020 design study funded by the European Union. EuPRAXIA is the first European project that develops a dedicated particle accelerator research infrastructure based on novel plasma acceleration concepts and laser technology. It focuses on the development of electron accelerators and underlying technologies, their user communities, and the exploitation of existing accelerator infrastructures in Europe. EuPRAXIA has involved, amongst others, the international laser community and industry to build links and bridges with accelerator science — through realising synergies, identifying disruptive ideas, innovating, and fostering knowledge exchange. The Eu-PRAXIA project aims at the construction of an innovative electron accelerator using laser- and electron-beam-driven plasma wakefield acceleration that offers a significant reduction in size and possible savings in cost over current state-of-the-art radiofrequency-based accelerators. The foreseen electron energy range of one to five gigaelectronvolts (GeV) and its performance goals will enable versatile applications in various domains, e.g. as a compact free-electron laser (FEL), compact sources for medical imaging and positron generation, table-top test beams for particle detectors, as well as deeply penetrating X-ray and gamma-ray sources for material testing. EuPRAXIA is designed to be the required stepping stone to possible future plasma-based facilities, such as linear colliders at the high-energy physics (HEP) energy frontier. Consistent with a high-confidence approach, the project includes measures to retire risk by establishing scaled technology demonstrators. This report includes preliminary models for project implementation, cost and schedule that would allow operation of the full Eu-PRAXIA facility within 8—10 years.
Abstract The development and optimization of high‐performance anode materials for alkali metal ion batteries is crucial for the green energy evolution. Atomic scale computational modeling such as density functional theory and molecular dynamics allows for efficient and adventurous materials design from the nanoscale, and have emerged as invaluable tools. Computational modeling cannot only provide fundamental insight, but also present input for multiscale models and experimental synthesis, often where quantities cannot readily be obtained by other means. In this review, an overview of three main anode classes; alloying, conversion, and intercalation‐type anodes, is provided and how atomic scale modeling is used to understand and optimize these materials for applications in lithium‐, sodium‐, and potassium‐ion batteries. In the last part of this review, a novel type of anode materials that are largely predicted from density functional theory simulations is presented. These 2D materials are currently in their early stages of development and are only expected to gain in importance in the years to come, both within the battery field and beyond, highlighting the ability of atomic scale materials design.
Amontons' law defines the friction coefficient as the ratio between friction force and normal force, and assumes that both these forces depend linearly on the real contact area between the two sliding surfaces. However, experimental testing of frictional contact models has proven difficult, because few in situ experiments are able to resolve this real contact area. Here, we present a contact detection method with molecular-level sensitivity. We find that while the friction force is proportional to the real contact area, the real contact area does not increase linearly with normal force. Contact simulations show that this is due to both elastic interactions between asperities on the surface and contact plasticity of the asperities. We reproduce the contact area and fine details of the measured contact geometry by including plastic hardening into the simulations. These new insights will pave the way for a quantitative microscopic understanding of contact mechanics and tribology.
Extreme ultraviolet (EUV) lithography is currently entering high-volume manufacturing to enable the continued miniaturization of semiconductor devices. The required EUV light, at 13.5 nm wavelength, is produced in a hot and dense laser-driven tin plasma. The atomic origins of this light are demonstrably poorly understood. Here we calculate detailed tin opacity spectra using the Los Alamos atomic physics suite ATOMIC and validate these calculations with experimental comparisons. Our key finding is that EUV light largely originates from transitions between multiply-excited states, and not from the singly-excited states decaying to the ground state as is the current paradigm. Moreover, we find that transitions between these multiply-excited states also contribute in the same narrow window around 13.5 nm as those originating from singly-excited states, and this striking property holds over a wide range of charge states. We thus reveal the doubly magic behavior of tin and the origins of the EUV light.
Polycrystalline diamond (PCD) deposited as a thin film is an attractive material, both technologically and from a scientific viewpoint, due to its unique combination of properties. However, because many applications require the PCD to have a high quality surface finish, efficient and cost-effective polishing has become a critical and limiting step in advancing the more widespread use of PCD. The most widely-used processes for the polishing of PCD make use of synergies that can be achieved through applying a combination of chemical and mechanical inputs. This paper reviews the current state-of-the-art of such processes, which are mainly represented by chemical mechanical polishing (CMP) technology, for the polishing of PCD. An in-depth and informative literature survey is presented of the effects of the PCD characteristics and process-dependent factors such as polishing slurry composition, polishing pad/plate material, and polishing parameters, on the polishing/material removal rate and surface quality. Particular attention is given to the underlying mechanisms governing the material removal during polishing, which are complex and vary depending on the process, and are still unclear. Three main routes to material removal during the polishing of diamond are identified and summarized based on experimental results, chemical characterizations and computational simulations: interfacial mechanochemical removal, chemically-stimulated mechanical removal, and mechanochemical transformation of diamond. Finally, more recently developed polishing methods that make use of ultraviolet and plasma irradiations are introduced, and the limitations of existing research and future research directions are discussed.
Shining a short, intense laser pulse on micrometer-sized droplets of liquid metal creates a plasma that is a bright source of extreme ultraviolet (EUV) light. The authors study in detail the propulsion and deformation of such droplets due to a laser ``kick'', and unveil the underlying mechanisms and scaling laws. Optimizing EUV plasma sources for next-generation nanolithography requires a deep understanding of both droplet-laser coupling and droplet fluid-dynamical response, which this work provides.
Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed that low-energy electrons (LEEs) generated in the resist materials by EUV photons are mostly responsible for the solubility switch that leads to nanopattern formation. Yet, reliable quantitative information on this electron-induced process is scarce. In this work, we combine LEE microscopy (LEEM), electron energy loss spectroscopy (EELS), and atomic force microscopy (AFM) to study changes induced by electrons in the 0-40 eV range in thin films of a state-of-the-art molecular organometallic EUV resist known as tin-oxo cage. LEEM-EELS uniquely allows to correct for surface charging and thus to accurately determine the electron landing energy. AFM postexposure analyses revealed that irradiation of the resist with LEEs leads to the densification of the resist layer because of carbon loss. Remarkably, electrons with energies as low as 1.2 eV can induce chemical reactions in the Sn-based resist. Electrons with higher energies are expected to cause electronic excitation or ionization, opening up more pathways to enhanced conversion. However, we do not observe a substantial increase of chemical conversion (densification) with the electron energy increase in the 2-40 eV range. Based on the dose-dependent thickness profiles, a simplified reaction model is proposed where the resist undergoes sequential chemical reactions, first yielding a sparsely cross-linked network and then a more densely cross-linked network. This model allows us to estimate a maximum reaction volume on the initial material of 0.15 nm 3 per incident electron in the energy range studied, which means that about 10 LEEs per molecule on average are needed to turn the material insoluble and thus render a pattern. Our observations are consistent with the observed EUV sensitivity of tin-oxo cages.
Abstract The hydrodesulfurization process is one of the cornerstones of the chemical industry, removing harmful sulfur from oil to produce clean hydrocarbons. The reaction is catalyzed by the edges of MoS 2 nanoislands and is operated in hydrogen-oil mixtures at 5–160 bar and 260–380 °C. Until now, it has remained unclear how these harsh conditions affect the structure of the catalyst. Using a special-purpose high-pressure scanning tunneling microscope, we provide direct observations of an active MoS 2 model catalyst under reaction conditions. We show that the active edge sites adapt their sulfur, hydrogen, and hydrocarbon coverages depending on the gas environment. By comparing these observations to density functional theory calculations, we propose that the dominant edge structure during the desulfurization of CH 3 SH contains a mixture of adsorbed sulfur and CH 3 SH.
The amount of absorbed light in thin photoresist films is a key parameter in photolithographic processing, but its experimental measurement is not straightforward. The optical absorption of metal oxide-based thin photoresist films for extreme ultraviolet (EUV) lithography was measured using an established methodology based on synchrotron light. Three types of materials were investigated: tin cage molecules, zirconium oxoclusters, and hafnium oxoclusters. The tin-containing compound was demonstrated to have optical absorption up to three times higher than conventional organic-based photoresists have. The absorptivity of the zirconium oxocluster was comparable to that of organic polymer-based photoresists, owing to the low absorption cross section of zirconium at EUV. The hafnium-containing resist shows about twice as high absorptivity as an organic photoresist, owing to the significantly higher absorbance of hafnium. From the chemical composition and crystal structure, the density of the spin-coated films was determined. Using the density of the films and the tabulated data for atomic cross section at EUV, the expected absorptivity of these resists was calculated and discussed in comparison to the experimental results. The agreement between measured and expected absorption was fairly good with some substantial discrepancies due to differences in the actual film density or to thickness inhomogeneity due to the spin coating. The developed method here enables the accurate measurement of the EUV absorption of the photoresists and can contribute to the further development of EUV resists and more accurate lithographic modeling.
Abstract The application of Li‐rich layered oxides is hindered by their dramatic capacity and voltage decay on cycling. This work comprehensively studies the mechanistic behaviour of cobalt‐free Li 1.2 Ni 0.2 Mn 0.6 O 2 and demonstrates the positive impact of two‐phase Ru doping. A mechanistic transition from the monoclinic to the hexagonal behaviour is found for the structural evolution of Li 1.2 Ni 0.2 Mn 0.6 O 2, and the improvement mechanism of Ru doping is understood using the combination of in operando and post‐mortem synchrotron analyses. The two‐phase Ru doping improves the structural reversibility in the first cycle and restrains structural degradation during cycling by stabilizing oxygen (O 2− ) redox and reducing Mn reduction, thus enabling high structural stability, an extraordinarily stable voltage (decay rate <0.45 mV per cycle), and a high capacity‐retention rate during long‐term cycling. The understanding of the structure‐function relationship of Li 1.2 Ni 0.2 Mn 0.6 O 2 sheds light on the selective doping strategy and rational materials design for better‐performance Li‐rich layered oxides.
An experimental study of laser-produced plasmas is performed by irradiating a planar tin target by laser pulses, of 4.8 ns duration, produced from a KTP-based 2-µm-wavelength master oscillator power amplifier. Comparative spectroscopic investigations are performed for plasmas driven by 1-µm- and 2-µm-wavelength pulsed lasers, over a wide range of laser intensities spanning 0.5 − 5 × 10 11 W/cm 2 . Similar extreme ultraviolet (EUV) spectra in the 5.5–25.5 nm wavelength range and underlying plasma ionicities are obtained when the intensity ratio is kept fixed at I 1µm / I 2µm = 2.4(7). Crucially, the conversion efficiency (CE) of 2-µm-laser energy into radiation within a 2% bandwidth centered at 13.5 nm relevant for industrial applications is found to be a factor of two larger, at a 60 degree observation angle, than in the case of the denser 1-µm-laser-driven plasma. Our findings regarding the scaling of the optimum laser intensity for efficient EUV generation and CE with drive laser wavelength are extended to other laser wavelengths using available literature data.
Plasmas produced from microdroplets of liquid tin provide light at an extreme ultraviolet (EUV) wavelength of 13.5 nm, for state-of-the-art nanolithography that will enable the continuation of Moore's law in shrinking transistors. Currently CO${}_{2}$ gas lasers are used to drive such plasma; transitioning to modern solid-state lasers would have significant advantages, if the efficiency of converting laser energy into 13.5-nm radiation were sufficiently competitive. This study quantifies the radiation efficiency of solid-state-laser-driven tin plasma. High conversion efficiencies are obtained, and paths toward higher efficiencies using 1-$\ensuremath{\mu}$m solid-state lasers are identified.
Mechanical activation in mechanical removal of GaN using diamond tip and mechanochemical removal using Al2O3 tip are described by the Archard equation and mechanically assisted Arrhenius-type kinetic model, respectively. Evident material-removal under elastic contact occurs with the assistance of interfacial mechanochemical reactions. By analyzing the mechanochemical reactions with Arrhenius-type kinetic model and Hertzian contact mechanics, the critical activation volume and activation barrier are determined semiquantitatively. The mechanical activation originating from the chemically active counter-surface facilitates the mechanochemical atomic attrition by altering the energy barrier of the reaction kinetics. This work can provide deep insights into the mechanochemical-removal mechanism of GaN.