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Anti Corruption and Civil Rights Commission

governmentDaejeon, South Korea

Research output, citation impact, and the most-cited recent papers from Anti Corruption and Civil Rights Commission (South Korea). Aggregated across the NobleBlocks index of 300M+ scholarly works.

Total works
4
Citations
225
h-index
4
i10-index
4
Also known as
Anti Corruption and Civil Rights Commission국민권익위원회

Top-cited papers from Anti Corruption and Civil Rights Commission

Efficient use of digital road map in various positioning for ITS
Wuk Kim, Gyu-In Jee, Jang-Gyu Lee
200283doi:10.1109/plans.2000.838299

There are many R&D improvements on positioning systems for ITS (intelligent transportation systems) adopting GPS, cellular phones or other communication systems. But, a position from any signal is always corrupted to a few meters through several hundreds of meters because of multipath, atmospheric delay, NLOS (non-line-of-sight), low DOP and so on. When the positioning systems are employed for ITS, a digital road map can be used together to display their navigation solutions in most ITS applications. Due to the fact that land-vehicles almost always run on roads, most of CNS (car navigation systems) translate the measured position onto a road. This methodology called map-matching, if it depends on a contaminated position due to white noise and biased error, has not only low accuracy but also the road ambiguity problems in some crossroads. Therefore, this paper presents an efficient use of an advanced map-matching in order to get a more improved accuracy, which estimates a large bias being the main source of errors and corrects a vehicle's position. It is composed of a modeling of biased error and filtering by a Kalman filter. We have applied the proposed map-matching to not only GPS navigation but also CDMA location. The proposed approach represents that in addition to its original visual display, an accurate digital road-map can improve the positioning accuracy effectively by correcting the vehicle's position.

A 0.1 μm inverted-sidewall recessed-channel (ISRC) nMOSFET for high performance and reliability
Jeongho Lyu, Byung‐Gook Park, Kukjin Chun, Jong Duk Lee
2002doi:10.1109/iedm.1995.499231

We have developed a 0.1 /spl mu/m recessed channel MOSFET structure called ISRC (Inverted Sidewall Recessed Channel) and optimized its process parameters. The maximum transconductance at V/sub D/=2.0 V is 446 mS/mm for the 0.1 /spl mu/m channel device and the DIBL (Drain Induced Barrier Lowering) is 66 mV from V/sub D/=0.1 V to V/sub D/=2.0 V. The impact ionization rate falls significantly as V/sub D/ falls below 1.5 V.