Hitachi (United Kingdom)
companyLeeds, United Kingdom
Research output, citation impact, and the most-cited recent papers from Hitachi (United Kingdom) (United Kingdom). Aggregated across the NobleBlocks index of 300M+ scholarly works.
Top-cited papers from Hitachi (United Kingdom)
We consider the problem of analyzing market-basket data and present several important contributions. First, we present a new algorithm for finding large itemsets which uses fewer passes over the data than classic algorithms, and yet uses fewer candidate itemsets than methods based on sampling. We investigate the idea of item reordering, which can improve the low-level efficiency of the algorithm. Second, we present a new way of generating "implication rules," which are normalized based on both the antecedent and the consequent and are truly implications (not simply a measure of co-occurrence), and we show how they produce more intuitive results than other methods. Finally, we show how different characteristics of real data, as opposed to synthetic data, can dramatically affect the performance of the system and the form of the results. 1 Introduction Within the area of data mining, the problem of deriving associations from data has recently received a great deal of attention. The prob...
We report the experimental observation of the spin-Hall effect in a 2D hole system with spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed coplanar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the spin-orbit split heavy-hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel, a nonzero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder, suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.
Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 10(6) ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn(2)Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading.
By analyzing 1,780,295 5'-end sequences of human full-length cDNAs derived from 164 kinds of oligo-cap cDNA libraries, we identified 269,774 independent positions of transcriptional start sites (TSSs) for 14,628 human RefSeq genes. These TSSs were clustered into 30,964 clusters that were separated from each other by more than 500 bp and thus are very likely to constitute mutually distinct alternative promoters. To our surprise, at least 7674 (52%) human RefSeq genes were subject to regulation by putative alternative promoters (PAPs). On average, there were 3.1 PAPs per gene, with the composition of one CpG-island-containing promoter per 2.6 CpG-less promoters. In 17% of the PAP-containing loci, tissue-specific use of the PAPs was observed. The richest tissue sources of the tissue-specific PAPs were testis and brain. It was also intriguing that the PAP-containing promoters were enriched in the genes encoding signal transduction-related proteins and were rarer in the genes encoding extracellular proteins, possibly reflecting the varied functional requirement for and the restricted expression of those categories of genes, respectively. The patterns of the first exons were highly diverse as well. On average, there were 7.7 different splicing types of first exons per locus partly produced by the PAPs, suggesting that a wide variety of transcripts can be achieved by this mechanism. Our findings suggest that use of alternate promoters and consequent alternative use of first exons should play a pivotal role in generating the complexity required for the highly elaborated molecular systems in humans.
Two interacting electrons confined to a disk on a semiconductor surface are considered in a perpendicular magnetic field. As it is appropriate for experimental realizations, we use a two-dimensional harmonic-oscillator well to confine the electrons in the plane of the disk. We predict oscillations between spin-singlet and spin-triplet ground states as a function of the magnetic field strnegth. Phase diagrams describing this peculiar manifestation of the electron-electron interaction in a quantum dot are calculated for GaAs and experiments to verify them are proposed.
We demonstrate the coherent destruction of photogenerated excitons in semiconductor quantum wells within a few hundred femtoseconds of their excitation. Coherent control of carrier dynamics is achieved with phase-locked pairs of 100 fs infrared pulses. The technique induces an optical response which is faster than the inverse of the exciton linewidth superseding Fourier limits for a single pulse. Energy selectivity enables the coherent transfer of angular momentum between hole states. Such phase-tailored pulse trains can be utilized to investigate the generation process and intermediate virtual states in quantum structures.
We have investigated coherent time evolution of pseudomolecular states of an isolated (leadless) silicon double quantum dot, where operations are carried out via capacitively coupled elements. Manipulation is performed by short pulses applied to a nearby gate, and measurement is performed by a single-electron transistor. The electrical isolation of this qubit results in a significantly longer coherence time than previous reports for semiconductor charge qubits realized in artificial molecules.
Two emerging technologies in the automotive domain are autonomous vehicles and V2X communication. Even though these technologies are usually considered separately, their combination enables two key cooperative features: sensing and maneuvering. Cooperative sensing allows vehicles to exchange information gathered from local sensors. Cooperative maneuvering permits inter-vehicle coordination of maneuvers. These features enable the creation of cooperative autonomous vehicles, which may greatly improve traffic safety, efficiency, and driver comfort. The first generation V2X communication systems with the corresponding standards, such as Release 1 from ETSI, have been designed mainly for driver warning applications in the context of road safety and traffic efficiency, and do not target use cases for autonomous driving. This article presents the design of core functionalities for cooperative autonomous driving and addresses the required evolution of communication standards in order to support a selected number of autonomous driving use cases. The article describes the targeted use cases, identifies their communication requirements, and analyzes the current V2X communication standards from ETSI for missing features. The result is a set of specifications for the amendment and extension of the standards in support of cooperative autonomous driving.
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band.
The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor. The device uses diffusive transport and operates without electrical current in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our study shows the utility of the spin Hall effect in a microelectronic device geometry, realizes the spin transistor with electrical detection directly along the gated semiconductor channel, and provides an experimental tool for exploring spin Hall and spin precession phenomena in an electrically tunable semiconductor layer.
Ultrafast optical pulses are used to initiate and measure free-induction decays of coherent conduction electron spins and of embedded magnetic ${\mathrm{Mn}}^{2+}$ ions in a series of magnetic-semiconductor quantum wells. These time-resolved Faraday rotation experiments in transverse applied magnetic fields complement previous studies of spin dynamics in longitudinal fields by unambiguously distinguishing between the spin relaxation of electrons and holes, and by identifying a mechanism by which angular momentum is transferred from spin-polarized carriers to the sublattice of local moments. In transverse fields (Voigt geometry), the precession of the photoexcited spins about the field axis can be measured as an oscillatory induced Faraday rotation signal. We observe the THz free-induction decay of spin-polarized electrons in modest (4 T) magnetic fields and separately identify the more rapid spin relaxation of the holes as functions of field and temperature. The $g$ factors of the electrons and holes are accurately measured as a function of well width. The role of quantum confinement on the stability of the hole spin is discussed, with particular attention given to the observed ability of the transient hole-exchange field to coherently rotate a macroscopic ensemble of local ${\mathrm{Mn}}^{2+}$ moments. This ``tipping pulse'' initiates a free-induction decay in the sublattice of ${\mathrm{Mn}}^{2+}$ spins and enables electron paramagnetic resonance (EPR) studies of the fractional monolayer magnetic planes. These time-domain EPR measurements reveal a significant magnetic field dependence of the Mn transverse spin relaxation time.
An enhancement in Brillouin light scattering of optical photons with magnons is demonstrated in magneto-optical whispering gallery mode resonators tuned to a triple-resonance point. This occurs when both the input and output optical modes are resonant with those of the whispering gallery resonator, with a separation given by the ferromagnetic resonance frequency. The identification and excitation of specific optical modes allows us to gain a clear understanding of the mode-matching conditions. A selection rule due to wave vector matching leads to an intrinsic single-sideband excitation. Strong suppression of one sideband is essential for one-to-one frequency mapping in coherent optical-to-microwave conversion.
By applying a dithiol (1,6-hexanedithiol) treatment, it was observed that a submonolayer of gold colloidal particles deposited by using an aminosilane adhesion agent [i.e., 3-(2-aminoethylamino) propyltrimethoxysilane] transform themselves into chains consisting of a few gold colloidal particles. In those chains, gold colloidal particles are believed to be linked by alkane chains derived from the dithiol molecules. The particle chain was formed on a SiO2 substrate with source, drain, and gate metal electrodes defined by electron beam lithography. It was observed that the gold particle chain bridged a gap between the source and drain forming a single electron transistor with a multi-tunnel junction in the particle chain. The electron conduction through the chain exhibited a clear Coulomb staircase and the periodic conductance oscillation as a function of gate voltage. These measurement results corresponded closely to the results of a simulation based on the orthodox theory.
Magnetic anisotropy phenomena in bimetallic antiferromagnets ${\text{Mn}}_{2}\text{Au}$ and MnIr are studied by first-principles density-functional theory calculations. We find strong and lattice-parameter-dependent magnetic anisotropies of the ground-state energy, chemical potential, and density of states, and attribute these anisotropies to combined effects of large moment on the $\text{Mn}\text{ }3d$ shell and large spin-orbit coupling on the $5d$ shell of the noble metal. Large magnitudes of the proposed effects can open a route towards spintronics in compensated antiferromagnets without involving ferromagnetic elements.
In this paper, we propose a novel end-to-end neural-network-based speaker diarization method. Unlike most existing methods, our proposed method does not have separate modules for extraction and clustering of speaker representations. Instead, our model has a single neural network that directly outputs speaker diarization results. To realize such a model, we formulate the speaker diarization problem as a multi-label classification problem, and introduces a permutation-free objective function to directly minimize diarization errors without being suffered from the speaker-label permutation problem. Besides its end-to-end simplicity, the proposed method also benefits from being able to explicitly handle overlapping speech during training and inference. Because of the benefit, our model can be easily trained/adapted with real-recorded multi-speaker conversations just by feeding the corresponding multi-speaker segment labels. We evaluated the proposed method on simulated speech mixtures. The proposed method achieved diarization error rate of 12.28%, while a conventional clustering-based system produced diarization error rate of 28.77%. Furthermore, the domain adaptation with real-recorded speech provided 25.6% relative improvement on the CALLHOME dataset. Our source code is available online at https://github.com/hitachi-speech/EEND.
Cutting-edge field-effect and thin-film transistors (FETs and TFTs) reportedly offer very high carrier mobilities, but the reliability of these values is controversial. This study reveals the complicated evolution of band bending and actual carrier concentrations in three-terminal devices with non-Ohmic contacts, and its effect on the estimation of carrier mobility. The widely used method is shown to be unreliable: In FETs or TFTs with gated Schottky contacts, mobility can be overestimated by a factor of 10 or more, while in those with resistive contacts it can be underestimated. Fortunately, this analysis also shows how to determine mobilities accurately.
A 1.8V 2Mb spin-transfer torque RAM chip using a 0.2 μm logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power non-volatile RAM, or universal memory. This chip features an array scheme with bit-by-bit bidirectional current write to achieve proper spin-transfer torque writing in 100ns, and parallelizing-direction current reading with a low-voltage bit-line that leads to 40ns access time.
Genome-wide association studies have reported that, amongst other microglial genes, variants in TREM2 can profoundly increase the incidence of developing Alzheimer's disease (AD). We have investigated the role of TREM2 in primary microglial cultures from wild type mice by using siRNA to decrease Trem2 expression, and in parallel from knock-in mice heterozygous or homozygous for the Trem2 R47H AD risk variant. The prevailing phenotype of Trem2 R47H knock-in mice was decreased expression levels of Trem2 in microglia, which resulted in decreased density of microglia in the hippocampus. Overall, primary microglia with reduced Trem2 expression, either by siRNA or from the R47H knock-in mice, displayed a similar phenotype. Comparison of the effects of decreased Trem2 expression under conditions of lipopolysaccharide (LPS) pro-inflammatory or IL-4 anti-inflammatory stimulation revealed the importance of Trem2 in driving a number of the genes up-regulated in the anti-inflammatory phenotype. RNA-seq analysis showed that IL-4 induced the expression of a program of genes including Arg1 and Ap1b1 in microglia, which showed an attenuated response to IL-4 when Trem2 expression was decreased. Genes showing a similar expression profile to Arg1 were enriched for STAT6 transcription factor recognition elements in their promoter, and Trem2 knockdown decreased levels of STAT6. LPS-induced pro-inflammatory stimulation suppressed Trem2 expression, thus preventing TREM2's anti-inflammatory drive. Given that anti-inflammatory signaling is associated with tissue repair, understanding the signaling mechanisms downstream of Trem2 in coordinating the pro- and anti-inflammatory balance of microglia, particularly mediating effects of the IL-4-regulated anti-inflammatory pathway, has important implications for fighting neurodegenerative disease.
Femtosecond-resolved measurements of induced Faraday rotation reveal exchange coupling between the spin angular momenta of charge carriers and a sublattice of magnetic ions in semiconductor quantum wells. In transverse magnetic fields, we observe terahertz spin precession of photoinjected electrons, rapid spin relaxation of holes, and the coherent transfer of angular momentum to the magnetic sublattice via the ultrafast rotation of the local moments. The perturbed ions undergo free-induction decay, enabling time-domain all-optical electron-spin-resonance measurements in single magnetic planes.