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Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions, reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the characteristics and properties of low-k dielectrics. In addition it addresses some of the needs for improved metrology for determining pore sizes, size distributions, structure, and mechanical properties.

H.264/AVC, the result of the collaboration between the ISO/IEC Moving Picture Experts Group and the ITU-T Video Coding Experts Group, is the latest standard for video coding. The goals of this standardization effort were enhanced compression efficiency, network friendly video representation for interactive (video telephony) and non-interactive applications (broadcast, streaming, storage, video on demand). H.264/AVC provides gains in compression efficiency of up to 50% over a wide range of bit rates and video resolutions compared to previous standards. Compared to previous standards, the decoder complexity is about four times that of MPEG-2 and two times that of MPEG-4 Visual Simple Profile. This paper provides an overview of the new tools, features and complexity of H.264/AVC.

Trusted execution environments, and particularly the Software Guard eXtensions (SGX) included in recent Intel x86 processors, gained significant traction in recent years. A long track of research papers, and increasingly also realworld industry applications, take advantage of the strong hardware-enforced confidentiality and integrity guarantees provided by Intel SGX. Ultimately, enclaved execution holds the compelling potential of securely offloading sensitive computations to untrusted remote platforms. We present Foreshadow, a practical software-only microarchitectural attack that decisively dismantles the security objectives of current SGX implementations. Crucially, unlike previous SGX attacks, we do not make any assumptions on the victim enclave’s code and do not necessarily require kernel-level access. At its core, Foreshadow abuses a speculative execution bug in modern Intel processors, on top of which we develop a novel exploitation methodology to reliably leak plaintext enclave secrets from the CPU cache. We demonstrate our attacks by extracting full cryptographic keys from Intel’s vetted architectural enclaves, and validate their correctness by launching rogue production enclaves and forging arbitrary local and remote attestation responses. The extracted remote attestation keys affect millions of devices.

Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

Wireless sensor nodes (WSNs) are employed today in many different application areas, ranging from health and lifestyle to automotive, smart building, predictive maintenance (e.g., of machines and infrastructure), and active RFID tags. Currently these devices have limited lifetimes, however, since they require significant operating power. The typical power requirements of some current portable devices, including a body sensor network, are shown in Figure 1.

This paper presents an overview of principles and requirements for powering wireless sensors by radio-frequency (RF) energy harvesting or transport. The feasibility of harvesting is discussed, leading to the conclusion that RF energy transport is preferred for powering small sized sensors. These sensors are foreseen in future Smart Buildings. Transmitting in the ISM frequency bands, respecting the transmit power limits ensures that the International Commission on Non-Ionizing Radiation Protection (ICNIRP) exposure limits are not exceeded. With the transmit side limitations being explored, the propagation channel is next discussed, leading to the observation that a better than free-space attenuation may be achieved in indoors line-of-sight environments. Then, the components of the rectifying antenna (rectenna) are being discussed: rectifier, dc-dc boost converter, and antenna. The power efficiencies of all these rectenna subcomponents are being analyzed and finally some examples are shown. To make RF energy transport a feasible powering technology for low-power sensors, a number of precautions need to be taken. The propagation channel characteristics need to be taken into account by creating an appropriate transmit antenna radiation pattern. All subcomponents of the rectenna need to be impedance matched, and the power transfer efficiencies of the rectifier and the boost converter need to be optimized.

Abstract The voltage loss, determined by the difference between the optical gap ( E g ) and the open‐circuit voltage ( V OC ), is one of the most important parameters determining the performance of organic solar cells (OSCs). However, the variety of different methods used to determine E g makes it hard to fairly compare voltages losses among different material systems. In this paper, the authors discuss and compare various E g determination methods and show how they affect the detailed calculation of voltage losses, as well as predictions of the maximum achievable power conversion efficiency. The aim of this paper is to make it possible for the OSC community to compare voltage losses in a consistent and reasonable way. It is found that the voltage losses for strongly absorbed photons in state‐of‐the‐art OSCs are not much less than 0.6 V, which still must be decreased to further enhance efficiency.

We demonstrate single-mode photonic wires in silicon-on-insulator with propagation loss as low as 2.4 dB/cm, fabricated with deep ultraviolet lithography and dry etching. We have also made compact racetrack and ring resonators functioning as add-drop filters, attaining Q values larger than 3000 and low add-drop crosstalk.

Abstract. Augmented Lagrangian methods with general lower-level constraints are considered in the present research. These methods are useful when efficient algorithms exist for solving subproblems in which the constraints are only of the lower-level type. Inexact resolution of the lower-level constrained subproblems is considered. Global convergence is proved using the Constant Positive Linear Dependence constraint qualification. Conditions for boundedness of the penalty param-eters are discussed. The reliability of the approach is tested by means of a comparison against Ipopt and Lancelot B. The resolution of location problems in which many constraints of the lower-level set are nonlinear is addressed, employing the Spectral Projected Gradient method for solving the subproblems. Problems of this type with more than 3 × 106 vari-ables and 14 × 106 constraints are solved in this way, using moderate computer time. The codes are free for download in www.ime.usp.br/∼egbirgin/tango/

In order to evaluate the prevalence of security and privacy practices on a representative sample of the Web, researchers rely on website popularity rankings such as the Alexa list. While the validity and representativeness of these rankings are rarely questioned, our findings show the contrary: we show for four main rankings how their inherent properties (similarity, stability, representativeness, responsiveness and benignness) affect their composition and therefore potentially skew the conclusions made in studies. Moreover, we find that it is trivial for an adversary to manipulate the composition of these lists. We are the first to empirically validate that the ranks of domains in each of the lists are easily altered, in the case of Alexa through as little as a single HTTP request. This allows adversaries to manipulate rankings on a large scale and insert malicious domains into whitelists or bend the outcome of research studies to their will. To overcome the limitations of such rankings, we propose improvements to reduce the fluctuations in list composition and guarantee better defenses against manipulation. To allow the research community to work with reliable and reproducible rankings, we provide TRANCO, an improved ranking that we offer through an online service available at https://tranco-list.eu.

Nanoparticles are the focus of much attention due to their astonishing properties and numerous possibilities for applications in nanotechnology. For realising versatile functions, assembly of nanoparticles in regular patterns on surfaces and at interfaces is required. Assembling nanoparticles generates new nanostructures, which have unforeseen collective, intrinsic physical properties. These properties can be exploited for multipurpose applications in nanoelectronics, spintronics, sensors, etc. This review surveys different techniques, currently employed and being developed, for assembling nanoparticles in to ordered nanostructures. In this endeavour, the principles and methods involved in the development of assemblies are discussed. Subsequently, different possibilities of nanoparticle-based nanostructures, obtained in multi-dimensions, are presented.

In this paper, a design method for the co-design and integration of a CMOS rectifier and small loop antenna is described. In order to improve the sensitivity, the antenna-rectifier interface is analyzed as it plays a crucial role in the co-design optimization. Subsequently, a 5-stage cross-connected differential rectifier with a 7-bit binary-weighted capacitor bank is designed and fabricated in standard 90 nm CMOS technology. The rectifier is brought at resonance with a high-Q loop antenna by means of a control loop that compensates for any variation at the antenna-rectifier interface and passively boosts the antenna voltage to enhance the sensitivity. A complementary MOS diode is proposed to improve the harvester's ability to store and hold energy over a long period of time during which there is insufficient power for rectification. The chip is ESD protected and integrated on a compact loop antenna. Measurements in an anechoic chamber at 868 MHz demonstrate a -27 dBm sensitivity for 1 V output across a capacitive load and 27 meter range for a 1.78 W RF source in an office corridor. The end-to-end power conversion efficiency equals 40% at -17 dBm.

This paper presents an asynchronous SAR ADC for flexible, low energy radios. To achieve excellent power efficiency for a relatively moderate resolution, various techniques are introduced to reduce the power consumption: custom-designed 0.5 fF unit capacitors minimize the analog power consumption while asynchronous dynamic logic minimizes the digital power consumption. The variability of the custom-designed capacitors is estimated by a specialized CAD tool and verified by chip measurements. An implemented 8-bit prototype in a 90 nm CMOS technology occupies 228 μm × 240 μm including decoupling capacitors, and achieves an ENOB of 7.77 bit at a sampling frequency of 10.24 MS/s. The power consumption equals 26.3 μW from a 1 V supply, thus resulting in an energy efficiency of 12 fJ/conversion-step. Moreover, the fully dynamic design, which is optimized for low-leakage, leads to a standby power consumption of 6 nW. In that way, the energy efficiency of this converter can be maintained down to very low sampling rates.

Abstract Perovskite solar cells (PSCs) have become a promising photovoltaic (PV) technology, where the evolution of the electron‐selective layers (ESLs), an integral part of any PV device, has played a distinctive role to their progress. To date, the mesoporous titanium dioxide (TiO 2 )/compact TiO 2 stack has been among the most used ESLs in state‐of‐the‐art PSCs. However, this material requires high‐temperature sintering and may induce hysteresis under operational conditions, raising concerns about its use toward commercialization. Recently, tin oxide (SnO 2 ) has emerged as an attractive alternative ESL, thanks to its wide bandgap, high optical transmission, high carrier mobility, suitable band alignment with perovskites, and decent chemical stability. Additionally, its low‐temperature processability enables compatibility with temperature‐sensitive substrates, and thus flexible devices and tandem solar cells. Here, the notable developments of SnO 2 as a perovskite‐relevant ESL are reviewed with emphasis placed on the various fabrication methods and interfacial passivation routes toward champion solar cells with high stability. Further, a techno‐economic analysis of SnO 2 materials for large‐scale deployment, together with a processing‐toxicology assessment, is presented. Finally, a perspective on how SnO 2 materials can be instrumental in successful large‐scale module and perovskite‐based tandem solar cell manufacturing is provided.

We report a change in the semimetallic nature of single-layer graphene after exposure to oxygen plasma. The resulting transition from semimetallic to semiconducting behavior appears to depend on the duration of the exposure to the plasma treatment. The observation is confirmed by electrical, photoluminescence and Raman spectroscopy measurements. We explain the opening of a bandgap in graphene in terms of functionalization of its pristine lattice with oxygen atoms. Ab initio calculations show more details about the interaction between carbon and oxygen atoms and the consequences on the optoelectronic properties, that is, on the extent of the bandgap opening upon increased functionalisation density.

It is difficult to meet all the different material and economical requirements posed to a MEMS structural layer that can be integrated with the electronics on the same substrate using a single layer process. Therefore a multilayer process, which uses a combination of a CVD crystallization layer and a high-growth rate PECVD bulk layer was developed. High-quality films with excellent electrical and mechanical properties can be obtained at low temperature (#450°C) and high deposition rates (~100 nm/min). Fine-tuning of the stress gradient is accomplished by the use of a top stress compensation layer, whose optimal thickness was estimated from an evaluation of the stress gradient profile over thickness. These layers have been used for processing a 10 µm thick poly-SiGe gyroscope on top of a standard 0.35 µm CMOS process.

Convolutional neural networks (CNNs) have become the dominant neural network architecture for solving many state-of-the-art (SOA) visual processing tasks. Even though graphical processing units are most often used in training and deploying CNNs, their power efficiency is less than 10 GOp/s/W for single-frame runtime inference. We propose a flexible and efficient CNN accelerator architecture called NullHop that implements SOA CNNs useful for low-power and low-latency application scenarios. NullHop exploits the sparsity of neuron activations in CNNs to accelerate the computation and reduce memory requirements. The flexible architecture allows high utilization of available computing resources across kernel sizes ranging from 1×1 to 7×7. NullHop can process up to 128 input and 128 output feature maps per layer in a single pass. We implemented the proposed architecture on a Xilinx Zynq field-programmable gate array (FPGA) platform and presented the results showing how our implementation reduces external memory transfers and compute time in five different CNNs ranging from small ones up to the widely known large VGG16 and VGG19 CNNs. Postsynthesis simulations using Mentor Modelsim in a 28-nm process with a clock frequency of 500 MHz show that the VGG19 network achieves over 450 GOp/s. By exploiting sparsity, NullHop achieves an efficiency of 368%, maintains over 98% utilization of the multiply-accumulate units, and achieves a power efficiency of over 3 TOp/s/W in a core area of 6.3 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . As further proof of NullHop's usability, we interfaced its FPGA implementation with a neuromorphic event camera for real-time interactive demonstrations.

Several studies have shown that the network traffic that is generated by a visit to a website over Tor reveals information specific to the website through the timing and sizes of network packets. By capturing traffic traces between users and their Tor entry guard, a network eavesdropper can leverage this meta-data to reveal which website Tor users are visiting. The success of such attacks heavily depends on the particular set of traffic features that are used to construct the fingerprint. Typically, these features are manually engineered and, as such, any change introduced to the Tor network can render these carefully constructed features ineffective. In this paper, we show that an adversary can automate the feature engineering process, and thus automatically deanonymize Tor traffic by applying our novel method based on deep learning. We collect a dataset comprised of more than three million network traces, which is the largest dataset of web traffic ever used for website fingerprinting, and find that the performance achieved by our deep learning approaches is comparable to known methods which include various research efforts spanning over multiple years. The obtained success rate exceeds 96% for a closed world of 100 websites and 94% for our biggest closed world of 900 classes. In our open world evaluation, the most performant deep learning model is 2% more accurate than the state-ofthe-art attack. Furthermore, we show that the implicit features automatically learned by our approach are far more resilient to dynamic changes of web content over time. We conclude that the ability to automatically construct the most relevant traffic features and perform accurate traffic recognition makes our deep learning based approach an efficient, flexible and robust technique for website fingerprinting.

As the dimensions of conductors shrink into the nanoscale, their electrical conductivity becomes dependent on their size even at room temperature. Although the behavior varies dramatically as temperatures increase from nanokelvins to hundreds of kelvins, the effect is generally to increase the resistivity above that of bulk material. As such, the underlying size-dependent phenomena have become increasingly important as advanced technologies have shifted their focus first from macro- to microscale and more recently from micro- to nanoscale dimensions. Indeed, the size-dependent increase of electrical resistivity that results from electron scattering on external and internal surfaces of copper conductors has already become technology limiting in modern microelectronics. This article summarizes the phenomena that underlie size effects, focusing on conduction in copper lines in particular. Attention is given to describing key innovations in both theoretical and experimental assessments that have significantly modified, facilitated, or advanced understanding.