Institut d'électronique de microélectronique et de nanotechnologie

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. By using a scanning confocal approach, we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.

We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS${}_{2}$ and WS${}_{2}$. We explore in detail the behavior of the Raman-active modes ${A}_{1g}$ and ${E}_{2g}^{1}$ as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et al., ACS Nano 4, 2695 (2010)], we find that the ${A}_{1g}$ mode increases in frequency with an increasing number of layers while the ${E}_{2g}^{1}$ mode decreases. We explain this decrease by an enhancement of the dielectric screening of the long-range Coulomb interaction between the effective charges with a growing number of layers. This decrease in the long-range part overcompensates for the increase of the short-range interaction due to the weak interlayer interaction.

We quantitatively investigate the size-dependent optical properties of colloidal PbS nanocrystals or quantum dots (Qdots), by combining the Qdot absorbance spectra with detailed elemental analysis of the Qdot suspensions. At high energies, the molar extinction coefficient epsilon increases with the Qdot volume d(3) and agrees with theoretical calculations using the Maxwell-Garnett effective medium theory and bulk values for the Qdot dielectric function. This demonstrates that quantum confinement has no influence on epsilon in this spectral range, and it provides an accurate method to calculate the Qdot concentration. Around the band gap, epsilon only increases with d(1.3), and values are comparable to the epsilon of PbSe Qdots. The data are related to the oscillator strength f(if) of the band gap transition and results agree well with theoretical tight-binding calculations, predicting a linear dependence of f(if) on d. For both PbS and PbSe Qdots, the exciton lifetime tau is calculated from f(if). We find values ranging between 1 and 3 mus, in agreement with experimental literature data from time-resolved luminescence spectroscopy. Our results provide a thorough general framework to calculate and understand the optical properties of suspended colloidal quantum dots. Most importantly, it highlights the significance of the local field factor in these systems.

Increasing attention on metamaterials has been paid due to their exciting physical behaviors and potential applications. While most of such artificial material structures developed so far are based on metallic resonant structures, Mie resonances of dielectric particles open a simpler and more versatile route for construction of isotropic metamaterials with higher operating frequencies. Here, we review the recent progresses of Mie resonance-based metamaterials by providing a description of the underlying mechanisms to realize negative permeability, negative permittivity and double negative media. We address some potential novel applications.

Integration of electrochemical capacitors with silicon-based electronics is a major challenge, limiting energy storage on a chip. We describe a wafer-scale process for manufacturing strongly adhering carbide-derived carbon films and interdigitated micro-supercapacitors with embedded titanium carbide current collectors, fully compatible with current microfabrication and silicon-based device technology. Capacitance of those films reaches 410 farads per cubic centimeter/200 millifarads per square centimeter in aqueous electrolyte and 170 farads per cubic centimeter/85 millifarads per square centimeter in organic electrolyte. We also demonstrate preparation of self-supported, mechanically stable, micrometer-thick porous carbon films with a Young's modulus of 14.5 gigapascals, with the possibility of further transfer onto flexible substrates. These materials are interesting for applications in structural energy storage, tribology, and gas separation.

Since the late ’80s, a highly stable conductive polymer has been developed, that is poly(3,4-ethylene dioxythiophene), also known as PEDOT. Its increasing conductivity throughout the years combined with its intrinsic stability have aroused great attention both in the academic and industrial fields. The growing importance of PEDOT, can be easily acknowledged through the numerous applications in thermoelectricity, photovoltaics, lighting, sensing, technical coatings, transparent electrodes, bioelectronics, and so forth. Although its high electrical conductivity is strongly established in the literature, the wide range of data shows that disorder, as the limiting factor in charges’ transport, hinders the design of materials with optimal performances. The aim of this article is to review and discuss recent progresses dealing with the electrical conductivity and transport properties in PEDOT materials, with special attention on morphological and structural features. Particular emphasis is given to the commercial PEDOT:PSS as well as other PEDOT-based materials stabilized with smaller counter-anions. It appears that the electrical conductivity and the transport mechanisms are closely related to the fabrication process, the crystallinity of the material and the choice of the counter-anions. With the tunable electrical properties, new functionalities appear accessible and add up to the already existing applications that are concisely highlighted.

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material for the fabrication of high-speed/high-voltage components. The presence of spontaneous and piezoelectric polarization allows us to create a two-dimensional electron gas, with high mobility and large channel density, in the absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors, switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable a high-frequency operation, with consequent advantages in terms of miniaturization. For high power/high-voltage operation, vertical device architectures are being proposed and investigated, and three-dimensional structures—fin-shaped, trench-structured, nanowire-based—are demonstrating great potential. Contrary to Si, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This Tutorial describes the physics, technology, and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight into the most relevant aspects gives the reader a comprehensive overview on the present and next-generation GaN electronics.

Nanocarbons with different dimensions (e.g., 0D fullerenes and carbon nanodots, 1D carbon nanotubes and graphene nanoribbons, 2D graphene and graphene oxides, and 3D nanodiamonds) have attracted enormous interest for applications ranging from electronics, optoelectronics, and photovoltaics to sensing, bioimaging, and therapeutics due to their unique physical and chemical properties. Among them, nanocarbon-based theranostics (i.e., therapeutics and diagnostics) is one of the most intensively studied applications, as these nanocarbon materials serve as excellent biosensors, versatile drug/gene carriers for specific targeting in vivo, effective photothermal nanoagents for cancer therapy, and promising fluorescent nanolabels for cell and tissue imaging. This review provides a systematic overview of the latest theranostic applications of nanocarbon materials with a comprehensive comparison of the characteristics of different nanocarbon materials and their influences on theranostic applications. We first introduce the different carbon allotropes that can be used for theranostic applications with their respective preparation and surface functionalization approaches as well as their physical and chemical properties. Theranostic applications are described separately for both in vitro and in vivo systems by highlighting the protocols and the studied biosystems, followed by the toxicity and biodegradability implications. Finally, this review outlines the design considerations for nanocarbon materials as the key unifying themes that will serve as a foundational first principle for researchers to study, investigate, and generate effective, biocompatible, and nontoxic nanocarbon materials-based models for cancer theranostics applications. Finally, we summarize the review with an outlook on the challenges and novel theranostic protocols using nanocarbon materials for hard-to-treat cancers and other diseases. This review intends to present a comprehensive guideline for researchers in nanotechnology and biomedicine on the selection strategy of nanocarbon materials according to their specific requirements.

Inductively coupled plasma mass spectrometry (ICP-MS) was combined with UV–vis−NIR spectrophotometry and transmission electron microscopy to determine the nanocrystal composition and molar extinction coefficient ϵ of colloidal PbSe quantum dot (Q-PbSe) suspensions. The ICP-MS results show a nonstoichiometric Pb/Se ratio, with a systematic excess of lead for all samples studied. The observed ratio is consistent with a faceted spherical Q-PbSe model, composed of a quasi stoichiometric Q-PbSe core terminated by a Pb surface shell. At high photon energies, we find that ϵ scales with the nanocrystal volume, irrespective of the Q-PbSe size. From ϵ, we calculated a size-independent absorption coefficient. Its value is in good agreement with the theoretical value for bulk PbSe. At the band gap, ϵ is size-dependent. The resulting absorption coefficient increases quadratically with decreasing Q-PbSe size. Calculations of the oscillator strength of the first optical transition are in good agreement with theoretical tight binding calculations, showing that the oscillator strength increases linearly with Q-PbSe size.

We present converged ab initio calculations of the optical absorption spectra of single-layer, double-layer, and bulk MoS${}_{2}$. Both the quasiparticle-energy calculations (on the level of the GW approximation ) and the calculation of the absorption spectra (on the level of the Bethe-Salpeter equation) explicitly include spin-orbit coupling, using the full spinorial Kohn-Sham wave functions as input. Without excitonic effects, the absorption spectra would have the form of a step function, corresponding to the joint density of states of a parabolic band dispersion in two dimensions. This profile is deformed by a pronounced bound excitonic peak below the continuum onset. The peak is split by spin-orbit interaction in the case of single-layer and (mostly) by interlayer interaction in the case of double-layer and bulk MoS${}_{2}$. The resulting absorption spectra are thus very similar in the three cases, but the interpretation of the spectra is different. Differences in the spectra can be seen in the shape of the absorption spectra at 3 eV where the spectra of the single and double layers are dominated by a strongly bound exciton.

Face recognition is one of the most active research fields of computer vision and pattern recognition, with many practical and commercial applications including identification, access control, forensics, and human-computer interactions. However, identifying a face in a crowd raises serious questions about individual freedoms and poses ethical issues. Significant methods, algorithms, approaches, and databases have been proposed over recent years to study constrained and unconstrained face recognition. 2D approaches reached some degree of maturity and reported very high rates of recognition. This performance is achieved in controlled environments where the acquisition parameters are controlled, such as lighting, angle of view, and distance between the camera–subject. However, if the ambient conditions (e.g., lighting) or the facial appearance (e.g., pose or facial expression) change, this performance will degrade dramatically. 3D approaches were proposed as an alternative solution to the problems mentioned above. The advantage of 3D data lies in its invariance to pose and lighting conditions, which has enhanced recognition systems efficiency. 3D data, however, is somewhat sensitive to changes in facial expressions. This review presents the history of face recognition technology, the current state-of-the-art methodologies, and future directions. We specifically concentrate on the most recent databases, 2D and 3D face recognition methods. Besides, we pay particular attention to deep learning approach as it presents the actuality in this field. Open issues are examined and potential directions for research in facial recognition are proposed in order to provide the reader with a point of reference for topics that deserve consideration.

In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum reflectivity, sensitivity as well as the Full Width at Half Maximum of SPR curve are systematically examined by using Fresnel equations and the transfer matrix method in the visible and near infrared wavelength range (600 nm to 1024 nm). The variation of the minimum reflectivity and the change in resonance angle as the function of the number of MX2 layers are presented respectively. The results show that silicon nanosheet and MX2 layers can be served as effective light absorption medium. Under resonance conditions, the electrons in these additional dielectric layers can be transferred to the surface of gold thin film. All silicon-MX2 enhanced sensing models show much better performance than that of the conventional sensing scheme where pure Au thin film is used, the highest sensitivity can be achieved by employing 600 nm excitation light wavelength with 35 nm gold thin film and 7 nm thickness silicon nanosheet coated with monolayer WS2.

In this paper, we study the dynamics of cylindrical armoured bubbles excited by mechanical vibrations. A step by step transition from cylindrical to spherical shape is reported as the intensity of the vibration is increased, leading to a reduction of the bubble surface and a dissemination of the excess particles. We demonstrate through energy balance that nonspherical armoured bubbles constitute a metastable state. The vibration instills the activation energy necessary for the bubble to return to its least energetic stable state: a spherical armoured bubble. At this point, particle desorption can only be achieved through higher amplitude of excitation required to overcome capillary retention forces. Nonspherical armoured bubbles open perspectives for tailored localized particle dissemination with limited excitation power.

A 1 k-pixel camera chip for active terahertz video recording at room-temperature has been fully integrated in a 65-nm CMOS bulk process technology. The 32 × 32 pixel array consists of 1024 differential on-chip ring antennas coupled to NMOS direct detectors operated well-beyond their cutoff frequency based on the principle of distributed resistive self-mixing. It includes row and column select and integrate-and-dump circuitry capable of capturing terahertz videos up to 500 fps. The camera chip has been packaged together with a 41.7-dBi silicon lens (measured at 856 GHz) in a 5 × 5 × 3 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> camera module. It is designed for continuous-wave illumination (no lock-in technique required). In this video-mode the camera operates up to 500 fps. At 856 GHz it achieves a responsivity <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Rv</i> of about 115 kV/W (incl. a 5-dB VGA gain) and a total noise equivalent power (NEP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">total</sub> ) of about 12 nW integrated over its 500-kHz video bandwidth. At a 5-kHz chopping frequency (non-video mode) a single pixel can provide a maximum responsivity <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</sub> of 140 kV/W (incl. a 5-dB VGA gain) and a minimum noise equivalent power ( NEP) of 100 pW/√Hz at 856 GHz. The wide-band antenna and pixel design achieves a 3-dB bandwidth of at least 790-960 GHz.

We show that the optical absorption spectra of boron nitride (BN) nanotubes are dominated by strongly bound excitons. Our first-principles calculations indicate that the binding energy for the first and dominant excitonic peak depends sensitively on the dimensionality of the system, varying from 0.7 eV in bulk hexagonal BN via 2.1 eV in the single sheet of BN to more than 3 eV in the hypothetical (2, 2) tube. The strongly localized nature of this exciton dictates the fast convergence of its binding energy with increasing tube diameter towards the sheet value. The absolute position of the first excitonic peak is almost independent of the tube radius and system dimensionality. This provides an explanation for the observed "optical gap" constancy for different tubes and bulk hexagonal BN.

The fabrication of miniaturized electrochemical energy storage systems is essential for the development of future electronic devices for Internet of Thing applications. This paper aims at reviewing the current micro-supercapacitor technologies and at defining the guidelines to produce high performance micro-devices with special focuses onto the 3D designs as well as the fabrication of solid state miniaturized devices to solve the packaging issue.

In this paper, we study the dynamics of cylindrical armoured bubbles excited by mechanical vibrations. A step by step transition from cylindrical to spherical shape is reported as the intensity of the vibration is increased, leading to a reduction of the bubble surface and a dissemination of the excess particles. We demonstrate through energy balance that nonspherical armoured bubbles constitute a metastable state. The vibration instills the activation energy necessary for the bubble to return to its least energetic stable state: a spherical armoured bubble. At this point, particle desorption can only be achieved through higher amplitude of excitation required to overcome capillary retention forces. Nonspherical armoured bubbles open perspectives for tailored localized particle dissemination with limited excitation power.

The aim of this work is to develop a smart flexible sensor adapted to textile structures, able to measure their strain deformations. The sensors are “smart” because of their capacity to adapt to the specific mechanical properties of textile structures that are lightweight, highly flexible, stretchable, elastic, etc. Because of these properties, textile structures are continuously in movement and easily deformed, even under very low stresses. It is therefore important that the integration of a sensor does not modify their general behavior. The material used for the sensor is based on a thermoplastic elastomer (Evoprene)/carbon black nanoparticle composite, and presents general mechanical properties strongly compatible with the textile substrate. Two preparation techniques are investigated: the conventional melt-mixing process, and the solvent process which is found to be more adapted for this particular application. The preparation procedure is fully described, namely the optimization of the process in terms of filler concentration in which the percolation theory aspects have to be considered. The sensor is then integrated on a thin, lightweight Nylon fabric, and the electromechanical characterization is performed to demonstrate the adaptability and the correct functioning of the sensor as a strain gauge on the fabric. A normalized relative resistance is defined in order to characterize the electrical response of the sensor. Finally, the influence of environmental factors, such as temperature and atmospheric humidity, on the sensor performance is investigated. The results show that the sensor’s electrical resistance is particularly affected by humidity. This behavior is discussed in terms of the sensitivity of the carbon black filler particles to the presence of water.

We investigate theoretically the band structure of a phononic crystal of finite thickness constituted of a periodical array of cylindrical dots deposited on a thin plate of a homogeneous material. We show that this structure can display a low-frequency gap, as compared to the acoustic wavelengths in the constituent materials, similarly to the case of locally resonant structures. The opening of this gap requires an appropriate choice of the geometrical parameters, and in particular the thickness of the homogeneous plate and the height of the dots. However, the gap persists for various combinations of the materials constituting the plate and the dots. Besides, the band structure can exhibit one or more higher gaps whose number increases with the height of the cylinders. We discuss the condition to realize waveguiding through a linear defect inside the phononic crystal dots. The numerical simulations are performed by using the finite difference time domain and the finite element methods.

We report on the resonant, voltage tunable emission of terahertz radiation (0.4–1.0 THz) from a gated two-dimensional electron gas in a 60 nm InGaAs high electron mobility transistor. The emission is interpreted as resulting from a current driven plasma instability leading to oscillations in the transistor channel (Dyakonov–Shur instability).