Laboratoire Albert Fert

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

6 MoreDOI:https://doi.org/10.1103/RevModPhys.80.1517*The 2007 Nobel Prize for Physics was shared by Albert Fert and Peter Grünberg. This paper is the text of the address given in conjunction of the award.

International audience

We adapt the spin accumulation model of the perpendicular transport in metallic magnetic multilayers to the issue of spin injection from a ferromagnetic metal (F) into a semiconductor (N). We show that the problem of the conductivity mismatch between F and N can be solved by introducing a spin dependent interface resistance (tunnel junction preferably) at the $F/N$ interfaces. In the case of a $F/N/F$ structure, a significant value of the magnetoresistance can be obtained if the junction resistance at the $F/N$ and $N/F$ interfaces is chosen between two threshold values depending on the resistivity, spin diffusion length and thickness of N. The problem is treated for various geometries (vertical or lateral $F/N/F$ structures).

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on "zero-current," gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

We have performed magnetotransport measurements on La2/3Sr1/3MnO3/SrTiO3/La2/3Sr1/3MnO3 magnetic tunnel junctions. A magnetoresistance ratio of more than 1800% is obtained at 4 K, from which we infer an electrode spin polarization of at least 95%. This result strongly underscores the half-metallic nature of mixed-valence manganites and demonstrates their capability as a spin analyzer. The magnetoresistance extends up to temperatures of more than 270 K. We argue that these improvements over most previous works may result from optimizing the patterning process for oxide heterostructures.

The Dzyaloshinskii-Moriya interaction (DMI) has been recently recognized to play a crucial role in allowing fast domain wall dynamics driven by spin-orbit torques and the generation of magnetic Skyrmions. Here, we unveil the main features and microscopic mechanisms of DMI in Co/Pt bilayers via first principles calculations. We find that the large DMI of the bilayers has a dominant contribution from the spins of the interfacial Co layer. This DMI between the interfacical Co spins extends very weakly away from the interface and is associated with a spin-orbit coupling in the adjacent atomic layer of Pt. Furthermore, no direct correlation is found between DMI and proximity induced magnetism in Pt. These results clarify the underlying mechanisms of DMI at interfaces between ferromagnetic and heavy metals and should help optimizing material combinations for domain wall and Skyrmion-based devices.

From an experimental point of view, room-temperature ferroelectricity in $\mathrm{Bi}\mathrm{Fe}{\mathrm{O}}_{3}$ is raising many questions. Electric measurements made a long time ago on solid solutions of $\mathrm{Bi}\mathrm{Fe}{\mathrm{O}}_{3}$ with $\mathrm{Pb}(\mathrm{Ti},\mathrm{Zr}){\mathrm{O}}_{3}$ indicate that a spontaneous electric polarization exists in $\mathrm{Bi}\mathrm{Fe}{\mathrm{O}}_{3}$ below the Curie temperature ${T}_{C}=1143\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. Yet in most reported works, the synthesized samples are too conductive at room temperature to get a clear polarization loop in the bulk without any effects of extrinsic physical or chemical parameters. Surprisingly, up to now there has been no report of a $P(E)$ (polarization versus electric field) loop at room temperature on single crystals of $\mathrm{Bi}\mathrm{Fe}{\mathrm{O}}_{3}$. We describe here our procedure to synthesize ceramics and to grow good quality sizeable single crystals by a flux method. We demonstrate that $\mathrm{Bi}\mathrm{Fe}{\mathrm{O}}_{3}$ is indeed ferroelectric at room temperature through evidence by piezoresponse force microscopy and $P(E)$ loops. The polarization is found to be large, around $60\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{C}∕{\mathrm{cm}}^{2}$, a value that has only been reached in thin films. Magnetic measurements using a superconducting quantum interference device magnetometer and M\"ossbauer spectroscopy are also presented. The latter confirms the results of nuclear magnetic resonance measurements concerning the anisotropy of the hyperfine field attributed to the magnetic cycloidal structure.

Through combined ferromagnetic resonance, spin pumping, and inverse spin Hall effect experiments in $\mathrm{Co}|\mathrm{Pt}$ bilayers and $\mathrm{Co}|\mathrm{Cu}|\mathrm{Pt}$ trilayers, we demonstrate consistent values of ${\ensuremath{\ell}}_{\mathrm{sf}}^{\mathrm{Pt}}=3.4\ifmmode\pm\else\textpm\fi{}0.4\text{ }\text{ }\mathrm{nm}$ and ${\ensuremath{\theta}}_{\mathrm{SHE}}^{\mathrm{Pt}}=0.056\ifmmode\pm\else\textpm\fi{}0.010$ for the respective spin diffusion length and spin Hall angle for Pt. Our data and model emphasize the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.

We have investigated the dimensionality and origin of the magnetotransport properties of ${\mathrm{LaAlO}}_{3}$ films epitaxially grown on ${\mathrm{TiO}}_{2}$-terminated ${\mathrm{SrTiO}}_{3}\left(001\right)$ substrates. High-mobility conduction is observed at low deposition oxygen pressures (${P}_{\mathrm{O}2}<{10}^{\ensuremath{-}5}\text{ }\text{ }\mathrm{mbar}$) and has a three-dimensional character. However, at higher ${P}_{\mathrm{O}2}$ the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the ${\mathrm{SrTiO}}_{3}$ substrates during the growth of the ${\mathrm{LaAlO}}_{3}$ layer. When grown on ${\mathrm{SrTiO}}_{3}$ substrates at low ${P}_{\mathrm{O}2}$, other oxides generate the same high mobility as ${\mathrm{LaAlO}}_{3}$ films. This opens interesting prospects for all-oxide electronics.

Magnetic skyrmions are small swirling topological defects in the magnetization texture stabilized by the protection due to their topology. In most cases they are induced by chiral interactions between atomic spins existing in non-centrosymmetric magnetic compounds or in thin films in which inversion symmetry is broken by the presence of an interface. The skyrmions can be extremely small with diameters in the nanometer range and, importantly, they behave as particles that can be moved, created or annihilated, making them suitable for abacus-type applications in information storage, logic or neuro-inspired technologies. Up to the last years skyrmions were observed only at low temperature (and in most cases under large applied fields) but important efforts of research has been recently devoted to find thin film and multilayered structures in which skyrmions are stabilized above room temperature and manipulated by current. This article focuses on these recent advances on the route to devices prototypes.

In the brain, learning is achieved through the ability of synapses to reconfigure the strength by which they connect neurons (synaptic plasticity). In promising solid-state synapses called memristors, conductance can be finely tuned by voltage pulses and set to evolve according to a biological learning rule called spike-timing-dependent plasticity (STDP). Future neuromorphic architectures will comprise billions of such nanosynapses, which require a clear understanding of the physical mechanisms responsible for plasticity. Here we report on synapses based on ferroelectric tunnel junctions and show that STDP can be harnessed from inhomogeneous polarization switching. Through combined scanning probe imaging, electrical transport and atomic-scale molecular dynamics, we demonstrate that conductance variations can be modelled by the nucleation-dominated reversal of domains. Based on this physical model, our simulations show that arrays of ferroelectric nanosynapses can autonomously learn to recognize patterns in a predictable way, opening the path towards unsupervised learning in spiking neural networks.

Prehistoric cultivation of wild wheat in the Fertile Crescent led to the selection of mutants with indehiscent (nonshattering) ears, which evolved into modern domestic wheat. Previous estimates suggested that this transformation was rapid, but our analyses of archaeological plant remains demonstrate that indehiscent domesticates were slow to appear, emerging approximately 9500 years before the present, and that dehiscent (shattering) forms were still common in cultivated fields approximately 7500 years before the present. Slow domestication implies that after cultivation began, wild cereals may have remained unchanged for a long period, supporting claims that agriculture originated in the Near East approximately 10,500 years before the present.

Oxides have become a key ingredient for new concepts of electronic devices. To a large extent, this is due to the profusion of new physics and novel functionalities arising from ultrathin oxide films and at oxide interfaces. We present here a perspective on selected topics within this vast field and focus on two main issues. The first part of this review is dedicated to the use of ultrathin films of insulating oxides as barriers for tunnel junctions. In addition to dielectric non-magnetic epitaxial barriers, which can produce tunneling magnetoresistances in excess of a few hundred percent, we pay special attention to the possibility of exploiting the multifunctional character of some oxides in order to realize ‘active’ tunnel barriers. In these, the conductance across the barrier is not only controlled by the bias voltage and/or the electrodes magnetic state, but also depends on the barrier ferroic state. Some examples include spin-filtering effects using ferro- and ferrimagnetic oxides, and the possibility of realizing hysteretic, multi-state junctions using ferroelectric barriers. The second part of this review is devoted to novel states appearing at oxide interfaces. Often completely different from those of the corresponding bulk materials, they bring about novel functionalities to be exploited in spintronics and electronics architectures. We review the main mechanisms responsible for these new properties (such as magnetic coupling, charge transfer and proximity effects) and summarize some of the most paradigmatic phenomena. These include the formation of high-mobility two-dimensional electron gases at the interface between insulators, the emergence of superconductivity (or ferromagnetism) at the interface between non-superconducting (or non-ferromagnetic) materials, the observation of magnetoelectric effects at magnetic/ferroelectric interfaces or the effects of the interplay and competing interactions at all-oxide ferromagnetic/superconducting interfaces. Finally, we link up the two reviewed research fields and emphasize that the tunneling geometry is particularly suited to probe novel interface effects at oxide barrier/electrode interfaces. We close by giving some directions toward tunneling devices exploiting novel oxide interfacial phenomena.

, synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

We present experiments of magnetization reversal by spin injection performed on pillar-shaped Co/Cu/Co trilayers. The pillars (200×600 nm2) are fabricated by electron beam lithography and reactive ion etching. Our data for the magnetization reversal at a threshold current confirm previous results on similar pillars. In addition, we present another type of experiment that also clearly evidences the control of the magnetic configuration by the current intensity. Our interpretation is based on a version of the Slonczewski model in which the polarization of the current is calculated in the Valet–Fert model of the giant magnetoresistance with current applied perpendicular to plane.

Magnonics addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operation in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors, which covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with the Boolean digital data, unconventional approaches, such as neuromorphic computing, and the progress toward magnon-based quantum computing. This article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of current challenges and the outlook of further development for each research direction.

In our numerical study, we identify the best conditions for efficient domain-wall motion by spin-orbit torques originating from the spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain-wall configuration, the current injection scheme, and the symmetry of the spin-orbit torque. The best identified configuration corresponds to a N\'eel wall driven by the spin Hall effect in a narrow strip with perpendicular magnetic anisotropy. In this case, the domain-wall velocity can be a factor of 10 larger than that for the conventional current-in-plane spin-transfer torque.

In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.