RCA (United States)

We describe a technique for image encoding in which local operators of many scales but identical shape serve as the basis functions. The representation differs from established techniques in that the code elements are localized in spatial frequency as well as in space. Pixel-to-pixel correlations are first removed by subtracting a lowpass filtered copy of the image from the image itself. The result is a net data compression since the difference, or error, image has low variance and entropy, and the low-pass filtered image may represented at reduced sample density. Further data compression is achieved by quantizing the difference image. These steps are then repeated to compress the low-pass image. Iteration of the process at appropriately expanded scales generates a pyramid data structure. The encoding process is equivalent to sampling the image with Laplacian operators of many scales. Thus, the code tends to enhance salient image features. A further advantage of the present code is that it is well suited for many image analysis tasks as well as for image compression. Fast algorithms are described for coding and decoding.

A motion sequence may be represented as a single pattern in x-y-t space; a velocity of motion corresponds to a three-dimensional orientation in this space. Motion sinformation can be extracted by a system that responds to the oriented spatiotemporal energy. We discuss a class of models for human motion mechanisms in which the first stage consists of linear filters that are oriented in space-time and tuned in spatial frequency. The outputs of quadrature pairs of such filters are squared and summed to give a measure of motion energy. These responses are then fed into an opponent stage. Energy models can be built from elements that are consistent with known physiology and psychophysics, and they permit a qualitative understanding of a variety of motion phenomena.

A new reversible photoelectronic effect is reported for amorphous Si produced by glow discharge of SiH4. Long exposure to light decreases both the photoconductivity and the dark conductivity, the latter by nearly four orders of magnitude. Annealing above 150 °C reverses the process. A model involving optically induced changes in gap states is proposed. The results have strong implications for both the physical nature of the material and for its applications in thin-film solar cells, as well as the reproducibility of measurements on discharge-produced Si.

Currents, far in excess of ohmic currents, can be drawn through thin, relatively perfect insulating crystals. These currents are the direct analog of space-charge-limited currents in a vacuum diode. In actual crystals, the space-charge-limited currents are less than their theoretical value for an ideal crystal by the ratio of free to trapped carriers. Space-charge-limited currents become, therefore, a simple tool for measuring the imperfections in crystals even in the range of one part in ${10}^{15}$.The presence of traps not only reduces the magnitude of space-charge-limited currents, but also is likely to distort the shape of the current-voltage curve from an ideal square law to a much higher power dependence on voltage. The particular shape can be used to determine the energy distribution of traps.The presence of traps tends to uniformize the charge distribution between electrodes, to introduce a temperature dependence of the current, and to give rise to certain transient effects from which capture cross sections of traps may be computed.Space-charge-limited currents offer another mechanism for electrical breakdown in insulators.

Impression of an external signal upon an oscillator of similar fundamental frequency affects both the instantaneous amplitude and instantaneous frequency. Using the assumption that time constants in the oscillator circuit are small compared to the length of one beat cycle, a differential equation is derived which gives the oscillator phase as a function of time. With the aid of this equation, the transient process of "pull-in" as well as the production of a distorted beat note are described in detail. It is shown that the same equation serves to describe the motion of a pendulum suspended in a viscous fluid inside a rotating container. The whole range of locking phenomena is illustrated with the aid of this simple mechanical model.

Transcription factors bind in a combinatorial fashion to specify the on-and-off states of genes; the ensemble of these binding events forms a regulatory network, constituting the wiring diagram for a cell. To examine the principles of the human transcriptional regulatory network, we determined the genomic binding information of 119 transcription-related factors in over 450 distinct experiments. We found the combinatorial, co-association of transcription factors to be highly context specific: distinct combinations of factors bind at specific genomic locations. In particular, there are significant differences in the binding proximal and distal to genes. We organized all the transcription factor binding into a hierarchy and integrated it with other genomic information (for example, microRNA regulation), forming a dense meta-network. Factors at different levels have different properties; for instance, top-level transcription factors more strongly influence expression and middle-level ones co-regulate targets to mitigate information-flow bottlenecks. Moreover, these co-regulations give rise to many enriched network motifs (for example, noise-buffering feed-forward loops). Finally, more connected network components are under stronger selection and exhibit a greater degree of allele-specific activity (that is, differential binding to the two parental alleles). The regulatory information obtained in this study will be crucial for interpreting personal genome sequences and understanding basic principles of human biology and disease. A description is given of the ENCODE consortium’s efforts to examine the principles of human transcriptional regulatory networks; the results are integrated with other genomic information to form a hierarchical meta-network where different levels have distinct properties. This manuscript describes the effort of the ENCODE (Encyclopedia of DNA Elements) Consortium to examine the principles of human transcriptional regulatory networks, using a subset of 119 transcription factors. The results are integrated with other genomic information to form a multi-level meta-network in which different levels have distinct properties. The findings will aid future interpretations of human genomics and help us to understand the basic principles of human biology and disease.

Abstract Granular metal films (50–200,000 Å thick) were prepared by co-sputtering metals (Ni, Pt, Au) and insulators (SiO2, Al2O3), where the volume fraction of metal, x, was varied from x = 1 to x = 0.05. The materials were characterized by electron micrography, electron and X-ray diffraction, and measurements of composition, density and electrical resistivity at electric fields ε up to 106 V/cm and temperatures T in the range of 1.3 to 291 K. In the metallic regime (isolated insulator particles in a metal continuum) and in the transition regime (metal and insulator particles in a metal continuum) and in the transition regime (metal and insulator labyrinth structure) the conduction is due to percolation with a percolation threshold at x⋍0.5. Tunnelling measurements on superconductor-insulator-granular metal junctions reveals that the transition from the metallic regime to the dielectric regime (10–50 Å size isolated metal particles in an insulator continuum) is associated with the breaking up of a metal continuum into isolated metal particles. In the dielectric regime the temperature dependence of the low-field resistivity is given by ρL = ρo exp [2√(C/kT)], and the field dependence of the high-field, low-temperature resistivity is given by ρH = ρ∞ exp (εo/ε), where ρo, ρ∞, C, and εo are material constants. A simple theory based on the assumption that the ratio s/d (d-metal particle size and s-separation between particles) is a function only of composition yields expressions for ρ(ε, T) in excellent agreement with experiment. Furthermore, the theory predicts the experimental finding that the resistivity can be expressed in terms of a universal function of the reduced variables kT/C and ε/εo. The inter-relationship between all the important physical properties of granular metals and their structure is also discussed.

Single-crystalline, colorless, GaN has been prepared by a vapor-phase growth technique previously used to prepare GaAs, GaP, and GaSb. These crystals are the first reported speciments of GaN suitable for good electrical and optical evaluation of this compound. It has been determined that GaN has a direct energy bandgap of 3.39 eV, and that undoped crystals prepared by this method have a very high inherent electron concentration, typically above 1019/cm3, which is probably related to a high density of nitrogen vacancies. Conducting p-type specimens have been prepared using Ge as the dopant; but this result has been difficult to reproduce, and the samples have been electrically inhomogeneous.

An ohmic contact between a metal and an insulator facilitates the injection of electrons into the insulator. Subsequent flow of the electrons is space-charge limited. In real insulators the trapping of electrons in localized states in the forbidden gap profoundly influences the current flow. The interesting features of the current density-voltage ($J\ensuremath{-}V$) characteristic are confined within a "triangle" in the $logJ\ensuremath{-}logV$ plane bounded by three limiting curves: Ohm's law, Child's law for solids ($J\ensuremath{\propto}{V}^{2}$) and a traps-filled-limit curve which has a voltage threshold and an enormously steep current rise. Simple inequalities relating the true field at the anode to the ohmic field facilitate qualitative discussion of the $J\ensuremath{-}V$ characteristic. Exact solutions have been obtained for an insulator with a single, discrete trap level in a simplified theory which idealizes the ohmic contact and neglects the diffusive contribution to the current. The discrete trap level produces the same type of nonlinearity discovered by Smith and Rose and attributed by them to traps distributed in energy.

Thin film solar cells, ∼1 μm thick, have been fabricated from amorphous silicon deposited from a glow discharge in silane. The cells were made in a p-i-n structure by using doping gases in the discharge. The best power conversion efficiency to date is 2.4% in AM-1 sunlight. The maximum efficiency of thin-film amorphous silicon solar cells is estimated to be ∼14–15%.

A model for superconducting Josephson junctions analogous to the driven simple pendulum with damping gives dc I-V curves displaying hysteresis for light damping. Excess current and negative dynamic resistance can be obtained with heavy damping.

The high-temperature thermal conductivity of a disordered semiconductor alloy is derived using the Klemens-Callaway theory. It is assumed that the reciprocal relaxation times depend on frequency $\ensuremath{\omega}$ as ${\ensuremath{\omega}}^{4}$ for strain and mass point defects and as ${\ensuremath{\omega}}^{2}$ for normal and umklapp three-phonon anharmonic processes. The thermal conductivity is expressed in terms of the lattice parameters and mean atomic weights of the alloy and its constituents. Agreement is obtained between theory and published experimental data on Ge-Si alloys at temperatures 300-1200\ifmmode^\circ\else\textdegree\fi{}K, and on (Ga,In)As alloys at 300\ifmmode^\circ\else\textdegree\fi{}K, using the value 2.5 for the ratio of umklapp to normal relaxation times. It is found that the large thermal resistivity of Ge-Si alloys is predominantly due to mass defect scattering, whereas that of (Ga,In)As alloys is mainly due to strain scattering.

BACKGROUND: Atrial fibrillation (AF) is associated with diffuse left atrial fibrosis and a reduction in endocardial voltage. These changes are indicators of AF severity and appear to be predictors of treatment outcome. In this study, we report the utility of delayed-enhancement magnetic resonance imaging (DE-MRI) in detecting abnormal atrial tissue before radiofrequency ablation and in predicting procedural outcome. METHODS AND RESULTS: Eighty-one patients presenting for pulmonary vein antrum isolation for treatment of AF underwent 3-dimensional DE-MRI of the left atrium before the ablation. Six healthy volunteers also were scanned. DE-MRI images were manually segmented to isolate the left atrium, and custom software was implemented to quantify the spatial extent of delayed enhancement, which was then compared with the regions of low voltage from electroanatomic maps from the pulmonary vein antrum isolation procedure. Patients were assessed for AF recurrence at least 6 months after pulmonary vein antrum isolation, with an average follow-up of 9.6+/-3.7 months (range, 6 to 19 months). On the basis of the extent of preablation enhancement, 43 patients were classified as having minimal enhancement (average enhancement, 8.0+/-4.2%), 30 as having moderate enhancement (21.3+/-5.8%), and 8 as having extensive enhancement (50.1+/-15.4%). The rate of AF recurrence was 6 patients (14.0%) with minimal enhancement, 13 (43.3%) with moderate enhancement, and 6 (75%) with extensive enhancement (P<0.001). CONCLUSIONS: DE-MRI provides a noninvasive means of assessing left atrial myocardial tissue in patients suffering from AF and might provide insight into the progress of the disease. Preablation DE-MRI holds promise for predicting responders to AF ablation and may provide a metric of overall disease progression.

In disordered materials generally characterized by large conducting regions (or long conducting pathways) separated by small insulating barriers, it is shown that the electrical conduction can be ascribed to a novel mechanism, fluctuation-induced tunneling, in which the thermally activated voltage fluctuations across insulating gaps play an important role in determining the temperature and field dependences of the conductivity. By considering the modulating effects induced by voltage fluctuations on either an image-force corrected rectangular potential barrier or a parabolic barrier, a theoretical expression for the tunneling conductivity is derived which displays thermally activated characteristics at high temperatures but becomes identical to the temperature-independent simple elastic tunneling at low temperatures. Between the two limiting behaviors the temperature dependence of the conductivity is controlled by the shape of the tunneling barrier. An expression for the high-field tunneling current is similarly obtained. It is found that, while the tunneling current increases as a nonlinear function of the field, the degree of nonlinearity decreases as the temperature increases, indicating an effective lowering and narrowing of the barrier by voltage fluctuations. The theory is also generalized from the consideration of a single tunnel junction to a random network of tunnel junctions by the application of the effective-medium theory. The theoretical predictions are compared with the experimental results for three disordered systems: (1) carbon-polyvinylchloride composites, (2) heavily doped, closely compensated GaAs, and (3) doped polyacetylene ${(\mathrm{CH})}_{x}$ in the metallic regime. In each case excellent agreement is obtained. It is shown in particular that the nonmetallic temperature dependence of the resistivity in doped metallic ${(\mathrm{CH})}_{x}$ samples can be understood in terms of the present theory.

The theory of the photovoltaic effect is used to predict the characteristics of a semiconductor which would operate with an optimum efficiency as a photovoltaic solar energy converter. The existence of such an optimum material results from the interaction between the optical properties of the semiconductor which determine what fraction of the solar spectrum is utilized and its electrical properties which determine the maximum efficiency of conversion into electricity. Considerable attention is devoted to the effect of the forbidden energy gap (EG) of the semiconductor. It is shown that atmospheric absorption causes a shift in the solar spectrum which changes the value of the optimum forbidden energy gap between the limits 1.2 ev&amp;lt;EG &amp;lt;1.6 ev. Furthermore, plausible departures of the diode reverse saturation current (I0) from the parametric dependence predicted by Shockley are considered, and it is shown that such departures reduce the advantage of the optimum material over others in the range 1.1 ev&amp;lt;EG&amp;lt;2.0 ev. The relation between EG and the load impedance for maximum power transfer from the solar converter is discussed. Finally, I0 is computed from the published values of the semiconductor parameters of three intermetallic compounds, i.e., InP, GaAs, and CdTe, and it is shown that the efficiencies predicted for these materials are greater than those predicted for other materials which have been proposed, i.e., Si, CdS, Se, and AlSb.

Impression of an external signal upon an oscillator of similar fundamental frequency affects both the instantaneous amplitude and instantaneous frequency. Using the assumption that time constants in the oscillator circuit are small compared to the length of one beat cycle, a differential equation is derived which gives the oscillator phase as a function of time. With the aid of this equation, the transient process of "pull-in" as well as the production of a distorted beat note are described in detail. It is shown that the same equation serves to describe the motion of a pendulum suspended in a viscous fluid inside a rotating container. The whole range of locking phenomena is illustrated with the aid of this simple mechanical model.

An absolute scale of performance is set up in terms of the performance of an ideal picture pickup device, that is, one limited only by random fluctuations in the primary photo process. Only one parameter, the quantum efficiency of the primary photo process, locates position on this scale. The characteristic equation for the performance of an ideal device has the form BC2α2=constantwhere B is the luminance of the scene, and C and α are respectively the threshold contrast and angular size of a test object in the scene. This ideal type of performance is shown to be satisfied by a simple experimental television pickup arrangement. By means of the arrangement, two parameters, storage time of the eye and threshold signal-to-noise ratio are determined to be 0.2 seconds and five respectively. Published data on the performance of the eye are compared with ideal performance. In the ranges of B(10−6 to 102 footlamberts), C(2 to 100 percent) and α(2′ to 100′), the performance of the eye may be matched by an ideal device having a quantum efficiency of 5 percent at low lights and 0.5 percent at high lights. This is of considerable technical importance in simplifying the analysis of problems involving comparisons of the performance of the eye and man-made devices. To the extent that independent measurements of the quantum efficiency of the eye confirm the values (0.5 percent to 5.0 percent), the performance of the eye is limited by fluctuations in the primary photo process. To the same extent, other mechanisms for describing the eye that do not take these fluctuations into account are ruled out. It is argued that the phenomenon of dark adaptation can be ascribed only in small part to the primary photo-process and must be mainly controlled by a variable gain mechanism located between the primary photo-process and the nerve fibers carrying pulses to the brain.

We present evidence that in granular metals the observed temperature dependence of the low-field conductivity, $\mathrm{exp}(\ensuremath{-}\frac{b}{{T}^{\ensuremath{\alpha}}})$ with $\ensuremath{\alpha}=\frac{1}{2}$, can be ascribed to a relationship $s{E}_{c}=\mathrm{const}$ between $s$, the separation of neighboring metal grains, and ${E}_{c}$, the electrostatic energy required to create a positive-negative charged pair of grains. This relationship results from simple considerations of the structure of granular metals. The predictions of the theory, for both the high- and the low-field electrical conductivity, are in excellent accord with experimental results in granular Ni-Si${\mathrm{O}}_{2}$ films.

A coplanar waveguide consists of a strip of thin metallic film on the surface of a dielectric slab with two ground electrodes running adjacent and parallel to the strip. This novel transmission line readily lends itself to nonreciprocal magnetic device applications because of the built-in circularly polarized magnetic vector at the air-dielectric boundary between the conductors. Practical applications of the coplanar waveguide have been experimentally demonstrated by measurements on resonant isolators and differential phase shifters fabricated on low-loss dielectric substrates with high dielectric constants. Calculations have been made for the characteristic impedance, phase velocity, and ripper bound of attenuation of a transmission line whose electrodes are all on one side of a dielectric substrate. These calculations are in good agreement with preliminary experimental results. The coplanar configuration of the transmission system not only permits easy shunt connection of external elements in hybrid integrated circuits, but also adapts well to the fabrication of monolithic integrated systems. Low-loss dielectric substrates with high dielectric constants may be employed to reduce the longitudinal dimension of the integrated circuits because the characteristic impedance of the coplanar waveguide is relatively independent of the substrate thickness; this may be of vital importance for Iow-frequency integrated microwave systems.

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