Spintronics Research Network of Japan

The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕Co20Fe60B20∕Ta pseudo-spin-valve magnetic tunnel junction annealed at 525°C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500°C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeB∕MgO interface. X-ray diffraction measurement of MgO on SiO2 or Co20Fe60B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450°C. The highest TMR ratio observed at 5K was 1144%.

This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale in 2006, the MRAM has grown to a 256 Mb product of Everspin in 2016. During this period, MRAM has overcome several hurdles and have reached a stage, where the potential for MRAM is very promising. One of the main hurdles that the MRAM overcome between 2006 and 2016 is the way the information is written. The 4 Mb MRAM used a magnetic field based switching technology that would be almost impossible to scale below 100 nm. The 256 Mb MRAM, on the other hand uses a different writing mechanism based on Spin Transfer Torque (STT), which is scalable to very low dimensions. In addition to the difference in the writing mechanism, there has also been a major shift in the storage material. Whereas the 4 Mb MRAM used materials with in-plane magnetic anisotropy, the 256 Mb MRAM uses materials with a perpendicular magnetic anisotropy (PMA). MRAM based on PMA is also scalable to much higher densities. The paper starts with a brief history of memory technologies, followed by a brief description of the working principles of MRAM for novice. Reading information from MRAM, the technologies, materials and the physics behind reading of bits in MRAM are described in detail. As a next step, the physics and technologies involved in writing information are described. The magnetic field based writing and its limitations are described first, followed by an explanation of STT mechanism. The materials and physics behind storage of information is described next. MRAMs with in-plane magnetization, their layered material structure and the disadvantages are described first, followed by the advantages of MRAMs with perpendicular magnetization, their advantages etc. The technologies to improve writability and potential challenges and reliability issues are discussed next. Some of the future technologies that might help the industry to move beyond the conventional MRAM technology are discussed at the end of the paper, followed by a summary and an outlook.

We report anisotropic magnetoresistance in $\mathrm{Pt}|{\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ bilayers. In spite of ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it ``spin Hall magnetoresistance.''

Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer, where the spin Hall effect in the NM is responsible for the switching. Here we show that an antiferromagnet/ferromagnet (AFM/FM) bilayer system also exhibits a SOT large enough to switch the magnetization of FM. In this material system, thanks to the exchange-bias effect of the AFM, we observe the switching under no applied field by using an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with a perpendicular easy axis. Furthermore, tailoring the stack achieves a memristor-like behaviour where a portion of the reversed magnetization can by controlled in an analogue manner. The AFM/FM system is thus a promising building block for SOT devices as well as providing an attractive pathway towards neuromorphic computing.

This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of $p$-type Mn-containing III-V as well as II-VI, IV-VI, ${V}_{2}\text{\ensuremath{-}}{\mathrm{VI}}_{3}$, I-II-V, and elemental group IV semiconductors are described, paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low-temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.

We report electrical manipulation of magnetization processes in a ferromagnetic semiconductor, in which low-density carriers are responsible for the ferromagnetic interaction. The coercive force HC at which magnetization reversal occurs can be manipulated by modifying the carrier density through application of electric fields in a gated structure. Electrically assisted magnetization reversal, as well as electrical demagnetization, has been demonstrated through the effect. This electrical manipulation offers a functionality not previously accessible in magnetic materials and may become useful for reversing magnetization of nanoscale bits for ultrahigh-density information storage.

Solid understanding of current induced torques is key to the development of current and voltage controlled magnetization dynamics in ultrathin magnetic heterostructures. To evaluate the size and direction of such torques, or effective fields, a number of methods have been employed. Here we examine the adiabatic (low frequency) harmonic Hall voltage measurement that has been used to study the effective field. We derive an analytical formula for the harmonic Hall voltages to evaluate the effective field for both out of plane and in-plane magnetized systems. The formula agrees with numerical calculations based on a macrospin model. Two different in-plane magnetized films, Pt|CoFeB|MgO and CuIr|CoFeB|MgO are studied using the formula developed. The effective field obtained for the latter system shows relatively good agreement with that estimated using a spin torque switching phase diagram measurements reported previously. Our results illustrate the versatile applicability of harmonic Hall voltage measurement for studying current induced torques in magnetic heterostructures.

We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/Mg(x)Zn(1-x)O heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 x 10(12) to 3.7 x 10(12) per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 +/- 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

Magnonics is a budding research field in nanomagnetism and nanoscience that addresses the use of spin waves (magnons) to transmit, store, and process information. The rapid advancements of this field during last one decade in terms of upsurge in research papers, review articles, citations, proposals of devices as well as introduction of new sub-topics prompted us to present the first roadmap on magnonics. This is a collection of 22 sections written by leading experts in this field who review and discuss the current status besides presenting their vision of future perspectives. Today, the principal challenges in applied magnonics are the excitation of sub-100 nm wavelength magnons, their manipulation on the nanoscale and the creation of sub-micrometre devices using low-Gilbert damping magnetic materials and its interconnections to standard electronics. To this end, magnonics offers lower energy consumption, easier integrability and compatibility with CMOS structure, reprogrammability, shorter wavelength, smaller device features, anisotropic properties, negative group velocity, non-reciprocity and efficient tunability by various external stimuli to name a few. Hence, despite being a young research field, magnonics has come a long way since its early inception. This roadmap asserts a milestone for future emerging research directions in magnonics, and hopefully, it will inspire a series of exciting new articles on the same topic in the coming years.

We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator, we use either yttrium iron garnet, nickel ferrite, or magnetite and for the nonferromagnet, copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization in the adjacent ferromagnet and prevail even if an additional, nonferromagnetic metal layer is inserted between Pt and the ferromagnet. Our experimental data corroborate these theoretical conjectures. Using the spin Hall magnetoresistance theory to analyze our data, we extract the spin Hall angle and the spin diffusion length in platinum. For a spin-mixing conductance of $4\ifmmode\times\else\texttimes\fi{}{10}^{14}\phantom{\rule{0.28em}{0ex}}{\ensuremath{\Omega}}^{\ensuremath{-}1}{\mathrm{m}}^{\ensuremath{-}2}$, we obtain a spin Hall angle of $0.11\ifmmode\pm\else\textpm\fi{}0.08$ and a spin diffusion length of $(1.5\ifmmode\pm\else\textpm\fi{}0.5)\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$ for Pt in our thin-film samples.

In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets separated by a thin insulator and exhibit two resistances, low (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> ) or high (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ap</sub> ) depending on the relative direction of ferromagnet magnetizations, parallel (P) or antiparallel (AP), respectively. Tunnel magnetoresistance (TMR) ratios, defined as (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ap</sub> $R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> )/R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> as high as 361%, have been obtained in MTJs with Co <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">40</sub> Fe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">40</sub> B <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">20</sub> fixed and free layers made by sputtering with an industry-standard exchange-bias structure and post deposition annealing at Ta = 400 degC. The corresponding output voltage swing DeltaV is over 500 mV, which is five times greater than that of the conventional amorphous Al-O-barrier MTJs. The highest TMR ratio obtained so far is 500% in a pseudospin-valve MTJ annealed at Ta = 475 degC, showing a high potential of the current material system. In addition to this high-output voltage swing, current-induced magnetization switching (CIMS) takes place at the critical current densities (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CO</sub> ) on the order of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in these MgO-barrier MTJs. Furthermore, high antiferromagnetic coupling between the two CoFeB layers in a synthetic ferrimagnetic free layer has been shown to result in a high thermal-stability factor with a reduced J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CO</sub> compared to single free-layer MTJs. The high TMR ratio enabled by the MgO-barrier MTJs, together with the demonstration of CIMS at a low J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CO</sub> , allows development of not only scalable magnetoresistive random-access memory with feature sizes below 90 nm but also new memory-in-logic CMOS circuits that can overcome a number of bottlenecks in the current integrated-circuit architecture

Heusler alloys are theoretically predicted to become half-metals at room temperature (RT). The advantages of using these alloys are good lattice matching with major substrates, high Curie temperature above RT and intermetallic controllability for spin density of states at the Fermi energy level. The alloys are categorised into half- and full-Heusler alloys depending upon the crystalline structures, each being discussed both experimentally and theoretically. Fundamental properties of ferromagnetic Heusler alloys are described. Both structural and magnetic characterisations on an atomic scale are typically carried out in order to prove the half-metallicity at RT. Atomic ordering in the films is directly observed by X-ray diffraction and is also indirectly probed via the temperature dependence of electrical resistivity. Element specific magnetic moments and spin polarisation of the Heusler alloy films are directly measured using X-ray magnetic circular dichroism and Andreev reflection, respectively. By employing these ferromagnetic alloy films in a spintronic device, efficient spin injection into a non-magnetic material and large magnetoresistance are also discussed. Fundamental properties of antiferromagnetic Heusler alloys are then described. Both structural and magnetic characterisations on an atomic scale are shown. Atomic ordering in the Heusler alloy films is indirectly measured by the temperature dependence of electrical resistivity. Antiferromagnetic configurations are directly imaged by X-ray magnetic linear dichroism and polarised neutron reflection. The applications of the antiferromagnetic Heusler alloy films are also explained. The other non-magnetic Heusler alloys are listed. A brief summary is provided at the end of this review.

A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p – i – n homojunction diodes through a semi-transparent electrode deposited on the p -type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p -type ZnO layer, indicating that the electron injection from the n -type layer to the p -type layer dominates the current, giving rise to the radiative recombination in the p -type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p -type layer, which is one or two orders of magnitude lower than that in the n -type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n -type ZnO. The employment of conducting ZnO substrates may solve the latter problem.

The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.

Nonvolatile logic-in-memory architecture, where nonvolatile memory elements are distributed over a logic-circuit plane, is expected to realize both ultra-low-power and reduced interconnection delay. We have fabricated a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions (MTJs) in combination with metal oxide semiconductor (MOS) transistors. Magnesium oxide (MgO) barrier MTJs are used to take advantage of their high tunnel magneto-resistance (TMR) ratio and spin-injection write capability. The MOS transistors are fabricated using a 0.18 µm complementary metal oxide semiconductor (CMOS) process. The basic operation of the full adder is confirmed.

The spin-splitter effect is theoretically predicted to generate an unconventional spin current with x- and z- spin polarization via the spin-split band in antiferromagnets. The generated torque, namely, spin-splitter torque, is effective for the manipulation of magnetization in an adjacent magnetic layer without an external magnetic field for spintronic devices such as MRAM. Here, we study the generation of torque in collinear antiferromagnetic RuO_{2} with (100), (101), and (001) crystal planes. Next we find all x-, y-, and z-polarized spin currents depending on the Néel vector direction in RuO_{2}(101). For RuO_{2}(100) and (001), only y-polarized spin current was present, which is independent of the Néel vector. Using the z-polarized spin currents, we demonstrate field-free switching of the perpendicular magnetized ferromagnet at room temperature. The spin-splitter torque generated from RuO_{2} is verified to be useful for the switching phenomenon and paves the way for a further understanding of the detailed mechanism of the spin-splitter effect and for developing antiferromagnetic spin-orbitronics.

The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (CoxFe100−x)80B20∕MgO∕(CoxFe100−x)80B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution transmission electron microscopy shows that the crystallization process of CoFeB during annealing depends on the composition and the thicknesses of the CoFeB film, resulting in different TMR ratios. A TMR ratio of 500% at room temperature and of 1010% at 5K are observed in a MTJ having 4.3nm and 4-nm-thick (Co25Fe75)80B20 electrodes with a 2.1-nm-thick MgO barrier annealed at 475°C.

Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, a spin-1 chiral fermion and a double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions.

We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nmφ was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double- and single-interface MTJs was comparable.

Skyrmion, a topologically-protected soliton, is known to emerge via electron spin in various magnetic materials. The magnetic skyrmion can be driven by low current density and has a potential to be stabilized in nanoscale, offering new directions of spintronics. However, there remain some fundamental issues in widely-studied ferromagnetic systems, which include a difficulty to realize stable ultrasmall skyrmions at room temperature, presence of the skyrmion Hall effect, and limitation of velocity owing to the topological charge. Here we show skyrmion bubbles in a synthetic antiferromagnetic coupled multilayer that are free from the above issues. Additive Dzyaloshinskii-Moriya interaction and spin-orbit torque (SOT) of the tailored stack allow stable skyrmion bubbles at room temperature, significantly smaller threshold current density or higher speed for motion, and negligible skyrmion Hall effect, with a potential to be scaled down to nanometer dimensions. The results offer a promising pathway toward nanoscale and energy-efficient skyrmion-based devices.