State Key Laboratory of Information Photonics and Optical Communications

β-Ga2O3 epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

For multi-task mobile edge computing (MEC) systems in satellite Internet of Things (IoT), there are dependencies between different tasks, which need to be collected and jointly offloaded. It is crucial to allocate the computing and communication resources reasonably due to the scarcity of satellite communication and computing resources. To address this issue, we propose a joint multi-task offloading and resource allocation scheme in satellite IoT to improve the offloading efficiency. We first construct a novel resource allocation and task scheduling system in which tasks are collected and decided by multiple unmanned aerial vehicles (UAV) based aerial base stations, the edge computing services are provided by satellites. Furthermore, we investigate the multi-task joint computation offloading problem in the framework. Specifically, we model tasks with dependencies as directed acyclic graphs (DAG), then we propose an attention mechanism and proximal policy optimization (A-PPO) collaborative algorithm to learn the best offloading strategy. The simulation results show that the A-PPO algorithm can converge in 25 steps. Furthermore, the A-PPO algorithm reduces cost by at least 8.87 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\%$</tex-math></inline-formula> compared to several baseline algorithms. In summary, this paper provides a new insight for the cost optimization of multi-task MEC systems in satellite IoT.

New materials can bring about tremendous progress in technology and applications. However, the commonly used trial-and-error method cannot meet the current need for new materials. Now, a newly proposed idea of using machine learning to explore new materials is becoming popular. In this paper, we review this research paradigm of applying machine learning in material discovery, including data preprocessing, feature engineering, machine learning algorithms and cross-validation procedures. Furthermore, we propose to assist traditional DFT calculations with machine learning for material discovery. Many experiments and literature reports have shown the great effects and prospects of this idea. It is currently showing its potential and advantages in property prediction, material discovery, inverse design, corrosion detection and many other aspects of life.

A successful two-dimensional (2D) semiconductor successor of silicon for high-performance logic in the post-silicon era should have both excellent performance and air stability. However, air-stable 2D semiconductors with high performance were quite elusive until the air-stable Bi2O2Se with high electron mobility was fabricated very recently (J. Wu, H. Yuan, M. Meng, C. Chen, Y. Sun, Z. Chen, W. Dang, C. Tan, Y. Liu, J. Yin, Y. Zhou, S. Huang, H. Q. Xu, Y. Cui, H. Y. Hwang, Z. Liu, Y. Chen, B. Yan and H. Peng, Nat. Nanotechnol., 2017, 12, 530). Herein, we predict the performance limit of the monolayer (ML) Bi2O2Se metal oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum transport simulation at the sub-10 nm gate length. The on-current, delay time, and power-delay product of the optimized n- and p-type ML Bi2O2Se MOSFETs can reach or nearly reach the high performance requirements of the International Technology Roadmap for Semiconductors (ITRS) until the gate lengths are scaled down to 2 and 3 nm, respectively. The large on-currents of the n- and p-type ML Bi2O2Se MOSFETs are attributed to either the large effective carrier velocity (n-type) or the large density of states near the valence band maximum and special shape of the band structure (p-type). A new avenue is thus opened for the continuation of Moore's law down to 2-3 nm by utilizing ML Bi2O2Se as the channel.

An epitaxial β-Ga₂O₃/Ga:ZnO heterojunction based self-powered DUV photodetector with an excellent wavelength selectivity and a high DUV/visible rejection ratio.

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe2 devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe2-metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

Ultralong single-crystalline CoP nanowires were grown on porous Co foam <italic>via</italic> a vapor–solid reaction method and used for overall electrochemical water splitting in alkaline solution.

A high-performance and easily fabricated Ni/β-Ga₂O₃ Schottky photodiode was developed for ultraviolet solar-blind detection.

The oxygen vacancies regulated <italic>via</italic> the lattice O atom formation/desorption process under oxidizing/reducing annealing reveal an effective modulating effect on the ε-Ga₂O₃ photodetector performances.

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe[subscript 2] devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe[subscript 2] and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin–orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for the WSe[subscript 2]–Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, the Pd contact has the smallest hole SBH. Dramatically, the Pt contact surpasses the Pd contact and becomes the p-type ohmic or quasi-ohmic contact with inclusion of the SOC. Therefore, p-type ohmic or quasi-ohmic contact exists in WSe[subscript 2]–metal interfaces. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe[subscript 2] devices.

evolution over the present NiS/CdS NWs was also proposed. This strategy would provide new insight into the design and development of high-performance heterostructured photocatalysts.

-based device into an Er-doped fiber (EDF) laser cavity, mode-locking and Q-switching laser pulses were formed. In the mode-locked mechanism output, the pulse width is as narrow as 131 fs and the output power is 52.93 mW. In Q-switched operation, the shortest pulse duration is 1.47 μs with the largest pulse energy of 257 nJ. Compared to recent studies, our results showed some improvements. This study suggests that 2D TTMDC-based devices could be developed as efficient ultrafast photonics candidates and widely used in nonlinear optical applications.

Polymer nanocomposites are a promising substitute for energy-storage dielectric materials in pulsed power systems. A barium titanate/polyvinylidenefluoride (BT/PVDF) nanocomposite is one of the most widely studied composite systems due to its comprehensive excellent dielectric properties. As the dielectric response of nanocomposites depends strongly on the size of the fillers, in this study, BT/PVDF nanocomposites with 92.3 nm, 17.8 nm and 5.9 nm BT particle fillers are fabricated to reveal the particle size effect of the fillers on the energy storage performance of the polymer nanocomposites. Owing to the small particle size and good dispersibility of the nanofillers, the nanocomposites with smaller BT particles show more uniform and denser microstructures. Moreover, with the increase of the filler fraction, the dielectric results indicate a breakdown strength enhancement in the nanocomposites with sub-20 nm BT fillers, which is quite different from the nanocomposites with normal fillers, and therefore leads to superior energy storage performance. This study provides experimental evidence for the application of ultrafine nanofillers in the nanocomposite for future energy storage systems.

Amorphous gallium oxide thin film with heavy oxygen deficiency was deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition in order to explore the resistive switching behavior of the Pt/Ga2O3-x/Pt sandwich structure. A well unipolar resistive switching behavior was obtained in this structure, which exhibits a high resistance ratio of OFF/ON up to 104, non-overlapping switching voltages, and excellent repeatability and retention. Both I-V relation plots of ON and OFF states and temperature dependent variation resistances indicate that the observed resistive switching behavior can be explained by the formation/rupture of conductive filaments formed out of oxygen vacancies.

A β-Ga₂O₃/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

Atomically dispersed Pt is prepared by photochemical synthesis at a record-low temperature of −60 °C, which exhibits ultrahigh catalytic activity.

Group VB transition metal dichalcogenides (TMDCs) are emerging two-dimensional materials and have attracted significant interests in the fields of physics, chemistry, and material sciences. However, there are very few reports about the optical characteristics and ultrafast photonic applications based on group VB TMDCs so far. In this work, we have calculated the niobium disulfide (NbS2) band structure by the density functional theory (DFT), which has revealed that NbS2 is a metallic TMDC. In addition, we have prepared an NbS2-microfiber device and the nonlinear optical characteristics have been investigated. The modulation depth, saturation intensity and non-saturable loss have been measured to be 13.7%, 59.93 MW cm-2 and 17.74%, respectively. Based on the nonlinear optical modulation effect, the Er-doped fiber (EDF) laser works in the soliton mode-locking state with the pump power of 94-413 mW. The pulse duration of 709 fs and the maximum average output power of 23.34 mW have been obtained at the pump power of 413 mW. The slope efficiency is as high as 6.79%. Compared to the recently reported studies based on TMDCs comprehensively, our experimental results are better. These experimental results demonstrate that NbS2 with excellent nonlinear optical properties can be used as a promising candidate to advance the development of ultrafast photonics.

In this work, we investigate VSe₂ for generating femtosecond and large energy mode-locked laser pulses for the first time.

Magnetically tunable wideband microwave filters have been designed and prepared by using ferrite-based metamaterial structures. The microwave properties of the filters have been investigated by experiments and simulations. The negative permeability appears around the ferromagnetic resonance frequency, which leads to a remarkable stopband for the bandstop filter. The bandpass filter is composed of two kinds of ferrite rods with different saturation magnetization. The bandwidth of the passband can be tuned by adjusting the saturation magnetization of the ferrite rods. Both the experimental and the simulated results show that those filters possess magnetically tunable property. This approach opens a way for designing tunable wideband microwave filters.

Two-dimensional materials have become the focus of research for their photoelectric properties, and are employed as saturable absorption materials. Currently, the challenge is how to further improve the modulation depth of saturable absorbers (SAs) based on two-dimensional materials. In this paper, three kinds of WSe2 films with different thicknesses are prepared using the chemical vapor deposition method. The nonlinear optical responses of the WSe2 films including the nonlinear saturable absorption and nonlinear refractive index are characterized by the double-balanced detection method and Z-scan experiments. Different modulation depths are successfully obtained by controlling the thickness of the WSe2 films. We further incorporate them into an all-fiber laser to generate mode-locked pulses. The mode-locked fiber lasers with a pulse duration of 185 fs, 205.7 fs and 230.3 fs are demonstrated when the thickness of the WSe2 films is measured to be 1.5 nm, 5.7 nm and 11 nm, respectively. This work provides new prospects for WSe2 in ultrafast photonic device applications.