An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

Zhao, Chao; Ng, T.; Prabaswara, Aditya; A. Conroy, Michele; Jahangir, S.; Frost, T.; F. O'Connell, John; Holmes, J.; Parbrook, P.; Bhattacharya, P.; Ooi, B.

doi:10.1039/c5nr03448e

Public

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

Shared by NobleBlocks on Oct 8, 2015 • 12:00 AM UTC

Authors:

Chao Zhao

T. Ng

Aditya Prabaswara

Abstract

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation ...

Subject

Materials Science

Medicine

Research Assistant

AI chat, annotations, notes & similar papers

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!