Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

M. Hartmann, J.; Abbadie, A.; M. Papon, A.; Holliger, P.; Rolland, G.; Billon, T.; M. Fédéli, J.; Rouvière, M.; Vivien, L.; Laval, S.

doi:10.1063/1.1699524

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Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Shared by NobleBlocks on May 15, 2004 • 12:00 AM UTC

Authors:

J. M. Hartmann

A. Abbadie

A. M. Papon

Abstract

Ge-based photodetectors operating in the low loss windows (1.3–1.6 μm) of silica fibers are highly desirable for the development of optical interconnections on silicon-on-insulator substrates. We have therefore investigated the structural and optical properties of Ge thick films grown directly onto ...

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