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Physics based models for process optimization

Published • Jan 1, 2007
NobleIDNI9P64W74R78S62
Authors:
Lourdes Pelaz
,
Luis A. Marqués
,
Marı́a Aboy

Abstract

The shrinking of Si device dimensions has revealed the need of detailed atomistic models to gain better understanding of physical mechanisms involved in device fabrication as a way for process optimization. Our atomistic model for amorphization based on the accumulation of bond defects captures the ...

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