Physics based models for process optimization
Published • Jan 1, 2007
NobleIDNI9P64W74R78S62
Authors:,,
Lourdes Pelaz
Luis A. Marqués
Marı́a Aboy
Abstract
The shrinking of Si device dimensions has revealed the need of detailed atomistic models to gain better understanding of physical mechanisms involved in device fabrication as a way for process optimization. Our atomistic model for amorphization based on the accumulation of bond defects captures the ...
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