Pattern shift error induced by coating and developing
Published in Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE • Jul 24, 1996
NobleIDNI8P06W72R31S98
Authors:,,
Shusuke Yoshitake
Kazuto Matsuki
Ryoichi Hirano
Abstract
Improvement of pattern placement accuracy is an important factor for the development of the electron beam (EB) lithography system for the next-generation photomask. It has been qualitatively pointed out that pattern shift error is induced by surface distortion of photomask. In this paper, we quantif...
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