Decrease in Slow Current Transients and Current Collapse in GaN-based FETs with a Filed Plate

Two-dimensional transient analyses of AlGaN/GaN HEMTs and GaN MESFETs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affec... View More