Drain current decrease in MOSFETs after heavy ion irradiation
Published in IEEE Transactions on Nuclear Science • Dec 1, 2004
NobleIDNI6P49W11R43S82
Authors:,,
Andrea Cester
Simone Gerardin
A. Paccagnella
Abstract
In this work, we have focused our attention on MOSFETs, which are the real basic elements of all CMOS applications. We have studied the immediate and latent effects produced by heavy ion irradiation on MOSFETs with ultrathin gate oxide, even after electrical stresses subsequent to irradiation. We fo...
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