Gate stack reliability improvements using controlled ambient processing
Published • Nov 22, 2002
NobleIDNI8P23W18R25S77
Authors:,,
K.F. Schuegraf
R. P. S. Thakur
R. Weirner
Abstract
This paper investigates the impact of ambient control in critical front-end processes. Gate-oxide reliability improvements and device implications for advanced sub-micron applications are described. Such processing limits exposure of wafers to clean-room air and promises reliability improvements, pa...
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