Defect Engineering for SIMOX Processing
Published in Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena • Oct 25, 2007
NobleIDNI0P81W52R64S13
Authors:,,
R. Kögler
A. Mücklich
W. Anwand
Abstract
SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated that vacancy defects promote ...
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