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On Approach to Decrease Dimensions of Field-Effect Transistors Framework Element of SRAM With Increasing Their Dimensions

Published in International Journal in Foundations of Computer Science & Technology • Jul 30, 2016
NobleIDNI1P56W91R03S13
Authors:
Pankratov E.L
,
Bulaeva E.A

Abstract

In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors consisting these elements. The approach based on manufacturing of the elements in heterostructure with specific configuration. We consider doping of several required areas of the heterostructu...

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