Модификация фотоэлектрических преобразователей лазерного излучения (lambda=808 нм), получaемых методом жидкофазной эпитаксии
Published in Физика и техника полупроводников • Jan 1, 2018
NobleIDNI6P31W78R87S80
Authors:,,
В. П. Хвостиков
S. V. Sorokina
Н. С. Потапович
Abstract
AbstractLaser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n -Al_0.07GaAs– p -Al_0.07GaAs– p -Al_0.25GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illum...
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