Измерение внутреннего квантового выхода излучения InGaN светодиода
Published in Журнал технической физики • Jan 1, 2021
NobleIDNI6P84W54R81S64
Authors:,,
I. V. Frolov
В. А. Сергеев
О. А. Radaev
Abstract
A method for measuring of internal quantum efficiency of InGaN-based light-emitting diode is presented. The method consists in measuring the emission power and 3dB frequencies of the LED electroluminescence at two low currents corresponding to the range of growth of the quantum efficiency of the LED...
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