Final program
Published • Aug 1, 2014
Authors:,,
B Conley
Y Zhou
A Mosleh
Abstract
We present photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.%. Calculations predict a net gain of 572 cm -1 for partially relaxed and moderately doped Ge0.88Sn0.12.
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