Recent progress in SiC‐based device processing
Published in Electronics and Communications in Japan (Part II Electronics) • Feb 1, 1999
Authors:
Toshiyuki Ohno
Abstract
Silicon carbide (SiC) has excellent properties as a semiconductor, such as a wide bandgap, a high breakdown electric field, and high heat conductivity. This paper reviews the recent status of device process technology for SiC, especially ion implantation, electrode formation, and etching. In contras...
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