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ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEMENT OF SRAM WITH INCREASING THEIR DIMENSIONS

Published in Zenodo (CERN European Organization for Nuclear Research) • Apr 12, 2023
Authors:
E. L. Pankratov
,
E.A. Bulaeva v

Abstract

In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors consisting these elements. The approach based on manufacturing of the elements in heterostructure with specific configuration. We consider doping of several required areas of the heterostructu...

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