ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEMENT OF SRAM WITH INCREASING THEIR DIMENSIONS
Published in Zenodo (CERN European Organization for Nuclear Research) • Apr 12, 2023
Authors:,
E. L. Pankratov
E.A. Bulaeva v
Abstract
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors consisting these elements. The approach based on manufacturing of the elements in heterostructure with specific configuration. We consider doping of several required areas of the heterostructu...
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