Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

Abstract In this paper, we explore the electrical characteristics of high-electron-mobility transistors (HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor (MIS) structure. The high-resistance tantalum nitride (TaN) film prepared by magnetron sputtering as the gate dielectric layer of the d... View More