Super Split-Gate LDMOS With Optimized RSP and 79.5% QGD Decrease on 55-nm BCD Platform for High-Frequency xPU Power Supply
Published in IEEE Transactions on Electron Devices • Jun 20, 2025
Authors:,,
Dingxiang Ma
Ming Qiao
Yulong Liao
Abstract
In this article, the super split-gate LDMOS (SSG LDMOS) on 55-nm BCD platform is proposed to overcome the tradeoff relationship among breakdown voltage (BV), specific ON-resistance (RSP), and gate-to-drain charge (QGD), while satisfying the requirement of high-frequency power system-on-chip (PwrSoC)...
Finding related papers...
Discussions
(0)No comments yet
Be the first to share your thoughts!