Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2 I. Basic model and CF2+-ion etch characterization

В. Смирнов, В.; V. Stengach, A.; G. Gaynullin, K.; Andino-Pavlovsky, Victoria; Rauf, Shahid; Stout, P.; L. G. Ventzek, Peter

doi:10.1063/1.1893205

Public

Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2 I. Basic model and CF2+-ion etch characterization

Shared by NobleBlocks on Apr 23, 2005 • 12:00 AM UTC

Authors:

В. В. Смирнов

A. V. Stengach

K. G. Gaynullin

Abstract

A molecular-dynamics-based model has been developed to understand etching of amorphous SiO2, with and without a fluorocarbon reactive layer, by energetic fluorocarbon (CFx+) ions. The model includes a representation of the solid and a set of interatomic potentials required for the SiO2–CFx interacti...

Subject

Ion

Fluorocarbon

Chemistry

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