ФіЗИКО-ТЕХНОЛОГіЧНі АСПЕКТИ БАГАТОЗАРЯДНОї іМПЛАНТАЦії АРСЕНіД ГАЛіЮ В СТРУКТУРАХ ПРИЛАДіВ і СХЕМ

The development of microelectronics in Ukraine was accompanied by altering of four generations of ion implantation equipment. Nowadays, ion implantation devices of three classes of small and medium doses, high doses and high energies, are used for micro-, opto- and nanoelectronics. For many years, d... View More