Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 reveal a strong dependence of the carrier relaxation time on the film thickness. For thicker films, the relaxation dynamics are similar to those of bulk Bi2Se3, where the cont... View More