Tensile Strain in Si Due to Expansion of Lattice Spacings in CeO[sub 2] Epitaxially Grown on Si(111)

The strain in Si, on which a single-crystalline gate oxide was epitaxially grown, was investigated by evaluating lattice spacings in and Si. In-plane X-ray diffraction measurements and observations of electron diffraction patterns by a transmission electron microscope were performed to examine the l... View More