Annealing effect on the electrical activity of extended defects in plastically deformed p‐Si with low dislocation density

V. Feklisova, O.; Pichaud, B.; B. Yakimov, E.

doi:10.1002/pssa.200460511

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Annealing effect on the electrical activity of extended defects in plastically deformed p‐Si with low dislocation density

Published in physica status solidi (a) • Mar 8, 2005

Authors:

O. V. Feklisova

B. Pichaud

E. B. Yakimov

Abstract

Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties of th...

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Subject

Annealing (glass)

Dislocation

Materials science

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