Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5–15 nm-thick S28i- and S30i-enriched layers were measured to reconstruct three-... View More