Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO₂ Directly Grown on Si(111)

We have investigated the reason behind the enhancement of dielectric constant ( ε ), which occurred in CeO 2 directly grown on Si(111). ε of directly grown CeO 2 is enhanced to 52, which is twice as large as the reported value. From in-plane X-ray diffraction measurements and electron diffraction pa... View More