Ion beam induced damaging and amorphization of crystalline InP is investigated. 100 keV B+, 300 keV Si+, 200 keV Ar+ and 600 keV Se+ ions are implanted into 〈100〉 InP at temperatures ranging from 80 K to 420 K. The implanted layers are analyzed using Rutherford backscattering spectrometry in channel...
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