The ferroelectric field effect has successfully been demonstrated on a bulk semiconductor (silicon) using a thin ferroelectric film of bismuth titanate (Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> Ti <inf xmlns:mml="http://www.w3.org/1998...
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