Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion

Coimplantation of heterogeneous dopants in materials can be used to control the principal dopant distribution. We used atom probe tomography (APT) and secondary ion mass spectrometry (SIMS) to investigate the impact of coimplanted carbon on boron diffusion in silicon. After annealing, three-dimensio... View More