GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

Adachi, Sadao

doi:10.1063/1.336070

Public

GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

Shared by NobleBlocks on Aug 1, 1985 • 12:00 AM UTC

Authors:

Sadao Adachi

Abstract

The AlxGa1−xAs/GaAs heterostructure system is potentially useful material for high-speed digital, high-frequency microwave, and electro-optic device applications. Even though the basic AlxGa1−xAs/GaAs heterostructure concepts are understood at this time, some practical device parameters in this syst...

Subject

Heterojunction

Lattice constant

Band gap

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