A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

A boost converter was constructed using a high voltage enhancement mode (E-mode) AlGaN/GaN/AlGaN DHFET transistor grown on Si<;111>. The very low dynamic onresistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dyn</sub> ≈ 0.23 Ω) and very low ga... View More