Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

Kinoshita, A.; Tsuchiya, Yuki; Yagishita, A.; Uchida, Ken; Koga, J.

doi:10.1109/vlsit.2004.1345459

Public

Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique

Shared by NobleBlocks on Jan 1, 2004 • 12:00 AM UTC

Authors:

A. Kinoshita

Yuki Tsuchiya

A. Yagishita

Abstract

A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi/sub 2/ ...

Subject

Schottky barrier

Materials science

MOSFET

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