Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

The correlation between threshold voltage (VT) and channel boron concentration in silicon-based 65 nm node negative-type metal-oxide-semiconductor field-effect transistors was studied by atom probe tomography (APT). VT values were determined for one million transistors in a single chip, and transist... View More