Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Ge-based photodetectors operating in the low loss windows (1.3–1.6 μm) of silica fibers are highly desirable for the development of optical interconnections on silicon-on-insulator substrates. We have therefore investigated the structural and optical properties of Ge thick films grown directly onto ... View More