Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

The electronic properties and thermal stability of centers incorporating a vacancy and a group-V-impurity atom (P, As, Sb, or Bi) in Ge crystals have been investigated. The vacancy-group-V-impurity atom pairs ($E$ centers) have been induced by irradiation with $^{60}\mathrm{Co}$ $\ensuremath{\gamma}... View More