Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

W. Lyding, Joseph; Hess, K.; Kizilyalli, I.C.

doi:10.1063/1.116172

Public

Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

Published in Applied Physics Letters • Apr 29, 1996

Authors:

Joseph W. Lyding

K. Hess

I.C. Kizilyalli

Abstract

We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10–50 are observe...

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Subject

Transistor

Materials science

Deuterium

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