<i>p</i>-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

Temperature dependences of the hole concentration and Hall mobility in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy were measured by the van der Pauw method over a wide temperature range from 100 to 500 K. Assuming that the effective mass of holes in Al0.08Ga0.92N is equa... View More