600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$

Blocking characteristics of diamond junction field-effect transistors were evaluated at room temperature (RT) and 200 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C. A high source-drain bias (breakdown voltage) of 566 V was recorded at RT, wh... View More