Interface states at<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi><mml:mn/><mml:mo>(</mml:mo><mml:mn>0001</mml:mn><mml:mo>)</mml:mo><mml:mn/></mml:math>interfaces observed by x-ray photoelectron spectroscopy measurements under bias:  Comparison between dry and wet oxidation

Kobayashi, Hikaru; Sakurai, T.; Takahashi, Masao; Nishioka, Yasushiro

doi:10.1103/physrevb.67.115305

Public

Interface states at<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi><mml:mn/><mml:mo>(</mml:mo><mml:mn>0001</mml:mn><mml:mo>)</mml:mo><mml:mn/></mml:math>interfaces observed by x-ray photoelectron spectroscopy measurements under bias: Comparison between dry and wet oxidation

Shared by NobleBlocks on Mar 5, 2003 • 12:00 AM UTC

Authors:

Hikaru Kobayashi

T. Sakurai

Masao Takahashi

Abstract

Interface states in almost the entire SiC band gap are observable by means of x-ray photoelectron spectroscopy (XPS) measurements under bias, although SiC is a wide-gap semiconductor having 2.9 eV band-gap energy. When a ${\mathrm{SiO}}_{2}$ layer is formed by wet oxidation at 1000 \ifmmode^\circ\el...

Subject

X-ray photoelectron spectroscopy

Analytical Chemistry (journal)

Materials science

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