Engineering of Hf<inf>1−x</inf>Al<inf>x</inf>O<inf>y</inf> amorphous dielectrics for high-performance RRAM applications

We propose for the first time a systematic evaluation of the performance and underlying trade-off of the use of ternary Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http... View More