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Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
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Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
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Shared by
NobleBlocks
on Mar 8, 2005 • 12:00 AM UTC
Authors:
Shinya Sato
,
I. Mizushima
,
K. Miyano
+5 more
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Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane | NobleBlocks
