Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

YC, Yang; F, Pan; Q, Liu; M, Liu; F, Zeng

doi:10.1021/nl900006g

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Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

Shared by NobleBlocks on Apr 1, 2009 • 12:00 AM UTC

Authors:

Yang YC

Pan F

Liu Q

Abstract

Through a simple industrialized technique which was completely fulfilled at room temperature, we have developed a kind of promising nonvolatile resistive switching memory consisting of Ag/ZnO:Mn/Pt with ultrafast programming speed of 5 ns, an ultrahigh R(OFF)/R(ON) ratio of 10(7), long retention tim...

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