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Kuc, Agnieszka; Zibouche, Nourdine; Heine, Thomas

doi:10.1103/physrevb.83.245213

Public

Influence of quantum confinement on the electronic structure of the transition metal sulfide<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>T</mml:mi></mml:mrow></mml:math>S<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Shared by NobleBlocks on Jun 30, 2011 • 12:00 AM UTC

Authors:

Agnieszka Kuc

Nourdine Zibouche

Thomas Heine

Abstract

Bulk MoS${}_{2}$, a prototypical layered transition-metal dichalcogenide, is an indirect band gap semiconductor. Reducing its slab thickness to a monolayer, MoS${}_{2}$ undergoes a transition to the direct band semiconductor. We support this experimental observation by first-principle calculations a...

Subject

Quantum dot

Transition metal

Semiconductor

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