Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

Sonehara, Takeshi; Hokazono, A.; Akutsu, Haruko; Sasaki, Tomokazu; Uchida, Hiroshi; Tomita, Mitsuhiro; Kawanaka, Shigeru; Inaba, S.; Toyoshima, Y.

doi:10.1109/ted.2011.2166557

Public

Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

Shared by NobleBlocks on Oct 5, 2011 • 12:00 AM UTC

Authors:

Takeshi Sonehara

A. Hokazono

Haruko Akutsu

Abstract

Platinum (Pt) incorporation into nickel silicide (NiSi) films improves silicide characteristics such as lower contact resistance <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RC</i> at silicide/Si interface and higher thermal stability. The impact of Pt...

Subject

Silicide

Nickel

Materials science

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